Hostname: page-component-6bf8c574d5-2jptb Total loading time: 0 Render date: 2025-02-22T23:24:49.554Z Has data issue: false hasContentIssue false
  • English
  • Français

Solid Phase Epitaxial Regrowth of Implanted III-V Materials and Alloys

Published online by Cambridge University Press:  28 February 2011

Christian Licoppe ,
Yves. I. Nissim ,
Christelle Meriadec ,
Pierre Henoc  and
Cecile D'Anterroches
Christian Licoppe
Affiliation:
C.N.E.T Laboratoire de Bagneux, 92220 Bagneux (France)
Yves. I. Nissim
Affiliation:
C.N.E.T Laboratoire de Bagneux, 92220 Bagneux (France)
Christelle Meriadec
Affiliation:
C.N.E.T Laboratoire de Bagneux, 92220 Bagneux (France)
Pierre Henoc
Affiliation:
C.N.E.T Laboratoire de Bagneux, 92220 Bagneux (France)
Cecile D'Anterroches
Affiliation:
C.N.E.T CNS 38243 Meylan (France)
Get access

Abstract

The amorphous-crystalline (with residual defects) transition is studied in several III-V binary semiconductors and a ternary alloy. Regrowth shows the same behaviour in all cases. The growth kinetics are thermally activated and the activation energies have been measured using time resolved reflectivity measurements. Correlation with vacancy migration characteristic energy is discussed. In the particular case of GaAs, high resolution electron micrograph of the growth front are displayed. They show a rough microscopic structures together with larger scale smooth deformations, attributed to diffusion instabilities.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 74: Symposium A – Beam-Solid Interactions and Transient Processes , 1986 , 385
Copyright
Copyright © Materials Research Society 1987

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Gamo, K., Ineda, T., Mayer, J. W., Eisen, F. H. and Rhodes, C.G. Rad. Eff. 33 85 (1977)Google Scholar
[2] Grimaldi, M. G., Paine, B. M., Maenpää, M., Nicolet, M. A. and Sadana, D. K., Appl. Phys. Lett. 39 70 (1981)Google Scholar
[3] Licoppe, C., Nissim, Y. I. and Meriadec, C., J. Appl. Phys. 58 1352 (1986)Google Scholar
[4] Licoppe, C., Nissim, Y. I. and Meriadec, C. J. Appl. Phys. 58 3094 (1985)Google Scholar
[5] Licoppe, C., Nissim, Y. I., Krauz, P. and Henoc, P. Appl. Phys. Lett. 49 316 (1986)Google Scholar
[6] Danilov, Yu. A. and Tulovchikov, V. S. Sov. Phys. Semicond. 14 117 (1980)Google Scholar
[7] Licoppe, C., Nissim, Y. I. and Meriadec, C. UnpublishedGoogle Scholar
[8] Licoppe, C, Nissim, Y. I., and d'Anterroches, C. unpublishedGoogle Scholar
[9] Licoppe, C., Nissim, Y.I. and Henoc, P. Appl. Phys. Lett. 48 1441 (1986)Google Scholar