Hostname: page-component-745bb68f8f-lrblm Total loading time: 0 Render date: 2025-01-15T07:01:54.170Z Has data issue: false hasContentIssue false
  • English
  • Français

Some Perspectives on the Luminescence Mechanism Via Surface-Confined States of Porous Si

Published online by Cambridge University Press:  28 February 2011

F. Koch ,
V. Petrova-Koch ,
T. Muschik ,
A. Nikolov  and
V. Gavrilenko
F. Koch
Affiliation:
Tech. Univ. Munich, Physik-Dept. E16, D-8046 Garching, Germany
V. Petrova-Koch
Affiliation:
Tech. Univ. Munich, Physik-Dept. E16, D-8046 Garching, Germany
T. Muschik
Affiliation:
Tech. Univ. Munich, Physik-Dept. E16, D-8046 Garching, Germany
A. Nikolov
Affiliation:
Tech. Univ. Munich, Physik-Dept. E16, D-8046 Garching, Germany
V. Gavrilenko
Affiliation:
Tech. Univ. Munich, Physik-Dept. E16, D-8046 Garching, Germany
Get access

Abstract

We elaborate on the explanation of radiative emission involving surface-confined states on the nanocrystallites of porous Si. After reviewing the evidence for the existence of such states, we give a model description of the origin of visible luminescence in porous Si. The model accounts for different spectral luminescence bands with distinct energies and relaxation times.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 283: Symposium F – Microcrystalline Semiconductors–Materials Science and Devices , 1992 , 197
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Canham, L.T., Appl. Phys. Lett. 57 (1990) 1046 Google Scholar
[2] Canham, L.T., invited lecture Symposium D, MRS Boston 1992 Google Scholar
[3] Calcott, P.D., Nash, K.J., Canham, L.T., Kane, M.J., Brumhead, D., preprint, subm. to NatureGoogle Scholar
[4] Prokes, S., Glembocki, O.J., Bermudez, V.M., Kaplan, R., Friedersdorf, L.E., Searson, P.C., Phys. Rev. B45, 13788 (1992)Google Scholar
[5] Brandt, M.S., Fuchs, H.D., Stutzmann, M., Weber, J., Cardona, M., Solid State Commun. 81, 307 (1992)Google Scholar
[6] Deak, P., Rosenbauer, M., Stutzmann, M., Weber, J., Brandt, M.S., Phys. Rev. Lett. 69, 2531 (1991)Google Scholar
[7] Xie, Y.H., Wilson, W.L., Ross, F.M., Mucha, J.A., Fitzgerald, E.A., Macaulay, J.M., Harris, T.D., J. Appl. Phys. 71, 2403 (1992)Google Scholar
[8] Miazzaki, S., Shiba, K., Sakamoto, K., Hirose, M., MRS Boston 1992, this VolumeGoogle Scholar
[9] Matsumoto, T., Daimon, M., Futagi, T., Mimura, H., Jpn. J. Appl. Phys. Lett. 31, 2619 (1992)Google Scholar
[10] Koch, F., Petrova-Koch, V., Muschik, T., Kux, A., Miiller, F., Gavrilenko, V., Moller, F., 21st Int. Conf. on the Phys. of Semicond. (Bejing 1992), to be publ.Google Scholar
[11] Petrova-Koch, V., Muschik, T., Kux, A., Meyer, B.K., Koch, F., Lehmann, V., Appl. Phys. Lett. 61, 943 (1992)Google Scholar
[12] Andrianov, A.V., Kovalev, D.I., Shuman, V.B., Yaroshetskii, I.D. JETP Lett. 56, 236 (1992)Google Scholar
[13] Franz, H., Petrova-Koch, V., Muschik, T., Lehmann, V., Peisl, J., MRS Boston 1992, this volumeGoogle Scholar
[14] Moller, F. and Ben-Chorin, M., unpublishedGoogle Scholar
[15] Tsang, J.C., Tischler, M.A., Collins, R.T., Appl. Phys. Lett. 60, 2279 (1992)Google Scholar
[16] Higashi, G.S., Chabal, Y.Y., Trucks, G.W., Raghavachari, Krishnan, Appl. Phys. Lett. 56, 656 (1990)Google Scholar
[17] Linke, H., Omling, P., Meyer, B.K., Petrova-Koch, V., Muschik, T., Lehmann, V., MRS Boston 1992, this volumeGoogle Scholar
[18] Gavrilenko, V., Vogl, P., Koch, F., MRS Boston 1992, this volumeGoogle Scholar
[19] Petrova-Koch, V., Muschik, T., Kovalev, D., Koch, F., MRS Boston 1992, this volumeGoogle Scholar
[20] Kux, A., Miiller, F., Koch, F., MRS Boston 1992, this volumeGoogle Scholar
[21] Peng, C., Tsybeskov, L., Fauchet, P.M., MRS Boston 1992, this volumeGoogle Scholar
[22] Collins, R. and Tischler, M., pres. at MRS Boston 1992 Google Scholar