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Stability of Silicide Films Under Post-Annealing: a Dopant Effect

Published online by Cambridge University Press:  21 February 2011

C.L. Shepard ,
W.A. Lanford ,
A.K. Pant  and
S. P. Murarka
C.L. Shepard
Affiliation:
Physics Department, State University of New York, Albany, NY
W.A. Lanford
Affiliation:
Physics Department, State University of New York, Albany, NY
A.K. Pant
Affiliation:
(now at Watkins-Johnson Corp., Scotts Valley, CA)
S. P. Murarka
Affiliation:
Department of Materials Engineering, Rensselaer Polytechnic Institute, Troy, NY
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Abstract

The formation of PtSi films by rapid thermal processing of e-beam evaporated Pt on <100> Si has been studied. The current study found that PtSi films have the potentially useful property of oxidizing, i.e., forming a surface layer of Si02 which may be useful for patterning. Rapid oxide formation is found with, possibly, linear growth rates when the film is doped with As to 8E15 atoms/cm2 at 80 KeV but insignificant oxidation if the film is undoped or B-doped. Rutherford backscattering analysis shows significant redistribution of the As during silicidation and oxidation with As excluded from the silicide, diffusing to the oxide and especially the oxide surface. Post-silicidation anneals have been done in a conventional tube furnace at 650ºC for up to 60 minutes and form an oxide thickness of up to 200 nm. NiSi films appear stable if Bdoped, oxidize with Ni piling up at the Si02/Si interface if undoped, and are unstable with Ni diffusing deep into the Si if As-doped.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 309: Symposium M2 – Materials Reliability in Microelectronics III , 1993 , 467
Copyright
Copyright © Materials Research Society 1993

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