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The Stimulated Crystallization of Amorphous SiO2 Films on Si Substrates Induced By Laser and Thermal Treatments

Published online by Cambridge University Press:  28 February 2011

Felix Edelman
Felix Edelman*
Affiliation:
Department of Materials Engineering, Technion, Haifa 32000, Israel
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Abstract

The transformation of amorphous to crystal (a-c) structure of Si02 layers, thermally grown on both (100) and (111) Si substrates, was carried out by CO2 laser, flash-lamp, and furnace heat: treatments. All the treatments resulted in S102 crystallization according to two different mechanisms: normal and self-sustained growth processes. The kinetic characteristics of the S102 crystallization process such as incubation time, rates of nucleation and growth, and the microstructure of the Si-Si02 interface were investigated and are discussed from the point of view of growth theory. The a-c transformation in Si3N4 and SixOyNz films on Si substrates is also discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 116 , 1988 , 381
Copyright
Copyright © Materials Research Society 1988

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References

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