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Stm Imaging of Adsorbed Trimethylgallium on GaAs(001)-(2×4)

Published online by Cambridge University Press:  15 February 2011

A. R. Avery ,
A. J. Mayne ,
C. M. Goringe ,
J. H. G. Owen ,
C. W. Smith ,
M. O. Schweitzer ,
T. S. Jones ,
G. A. D. Briggs  and
W. H. Weinberg
A. R. Avery
Affiliation:
IRC for Semiconductor Materials and Department of Chemistry, Imperial College, London SW7 2AY, UK
A. J. Mayne
Affiliation:
Department of Materials, University of Oxford, Oxford OX1 3PH, UK
C. M. Goringe
Affiliation:
Department of Materials, University of Oxford, Oxford OX1 3PH, UK
J. H. G. Owen
Affiliation:
Department of Materials, University of Oxford, Oxford OX1 3PH, UK
C. W. Smith
Affiliation:
Department of Materials, University of Oxford, Oxford OX1 3PH, UK
M. O. Schweitzer
Affiliation:
Department of Materials, University of Oxford, Oxford OX1 3PH, UK
T. S. Jones
Affiliation:
IRC for Semiconductor Materials and Department of Chemistry, Imperial College, London SW7 2AY, UK
G. A. D. Briggs
Affiliation:
Department of Materials, University of Oxford, Oxford OX1 3PH, UK
W. H. Weinberg
Affiliation:
QUEST and Department of Chemical and Nuclear Engineering, UCSB, CA 93106, USA
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Abstract

Scanning tunnelling microscopy (STM) has been used to image the adsorption of trimethylgallium (TMGa) on GaAs(001)-(2×4) surfaces prepared in situ by molecular beam epitaxy (MBE). Filled states images of the clean surface are dominated by (2×4) unit cells containing only two As dimers. Upon exposure of this surface to TMGa at room temperature, bright oval-shaped features are observed which are centred on the arsenic dimers of the unit cell. These arise from tunnelling from Ga-C bonds of the adsorbed molecules. At low coverages, preferential adsorption on unit cells adjacent to occupied sites along the [110] direction is observed. A detailed statistical analysis of a large number of adsorption sites shows that there is an increased probability of about 24% for adsorption next to a (2×4) unit cell which is occupied relative to an unoccupied one.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 312: Symposium P – Common Themes and Mechanisms of Epitaxial Growth , 1993 , 219
Copyright
Copyright © Materials Research Society 1993

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