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Strain Relaxation and Oxide Formation on Annealed W/CMultilayers

Published online by Cambridge University Press:  15 February 2011

J. F. Geisz ,
Y. H. Phang ,
T. F. Kuech ,
M. G. Lagally ,
F. Cardone  and
R. M. Potemski
J. F. Geisz
Affiliation:
Department of Chemical Engineering, University of Wisconsin, Madison, WI 53706
Y. H. Phang
Affiliation:
Material Science Program, University of Wisconsin, Madison, WI 53706
T. F. Kuech
Affiliation:
Department of Chemical Engineering, University of Wisconsin, Madison, WI 53706
M. G. Lagally
Affiliation:
Material Science Program, University of Wisconsin, Madison, WI 53706
F. Cardone
Affiliation:
T.J. Watson Research Center, IBM, Yorktown Heights, NY 10598
R. M. Potemski
Affiliation:
T.J. Watson Research Center, IBM, Yorktown Heights, NY 10598
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Abstract

Tungsten-carbon (W/C) Multilayer structures are used as X-ray mirrors andother optical elements. The optical properties of such elements are highlysensitive to changes in strain due to thermal processing. Sensitivecurvature measurements were performed on 40A period W/C Multilayerstructures on Si substrates using a two beam laser reflection technique. Acompressive stress of approximately 1530 MPa was measured in these sputteredmultilayer films. Thermal annealing to 500 C in air and under vacuumresulted in very little strain relaxation in the multilayers but X-raydiffraction data show a slight increase of the multilayer period.Significant strain relaxation, though, was observed when a 400Å W bufferlayer was included. Thermal annealing of these samples to 400–500°C resultedin large strain relaxation due to the formation of a-W crystals in thebuffer layer. Moderate oxide formation on air annealed samples as measuredby SIMS was shown not to be a dominant mechanism of strain relaxation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 321: Symposium E – Crystallization and Related Phenomena in Amorphous Materials—Ceramics, Metals, Polymers, and Semiconductors , 1993 , 215
Copyright
Copyright © Materials Research Society 1994

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References

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