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Strained Quantum Dots in Porous Silicon

Published online by Cambridge University Press:  28 February 2011

Xue-Shu Zhao ,
Peter D. Persans ,
John Schroeder  and
Yeun-Jung Wu
Xue-Shu Zhao
Affiliation:
Physics Department and Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY. 12180
Peter D. Persans
Affiliation:
Physics Department and Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY. 12180
John Schroeder
Affiliation:
Physics Department and Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY. 12180
Yeun-Jung Wu
Affiliation:
Physics Department and Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY. 12180
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Abstract

On the basis of Raman, photoluminescence, and absorption studies of porous and nanoparticle silicon we propose that the strong luminescence in porous silicon results from strained silicon quantum dots. A silicon nanoparticle is a special Jahn-Teller system induced by extended electron states rather than localized state. Thus Raman scattering and photoluminescence in porous silicon are multi-phonon assisted free electronic transition processes, all observed anomalous properties of porous silicon can be clearly explained by using this strained quantum dot model.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 283: Symposium F – Microcrystalline Semiconductors–Materials Science and Devices , 1992 , 127
Copyright
Copyright © Materials Research Society 1993

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References

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