Hostname: page-component-78c5997874-fbnjt Total loading time: 0 Render date: 2024-11-10T11:46:12.469Z Has data issue: false hasContentIssue false
  • English
  • Français

Structural and electrical characterizations of oxynitride films on solid phase epitaxially grown silicon carbide

Published online by Cambridge University Press:  21 March 2011

L. K. Bera ,
W. K. Choi ,
D. McNeill ,
S. K. Ray ,
S. Chatterjee  and
C. K. Maiti
L. K. Bera
Affiliation:
Microelectronics Laboratory, Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576
W. K. Choi
Affiliation:
Microelectronics Laboratory, Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576
D. McNeill
Affiliation:
Department of Electronics and Electrical Engineering, The Queen's University of Belfast, Belfast, U.K.
S. K. Ray
Affiliation:
Department of Physics and Meteorology, Indian Institute of Technology, Kharagpur, India.
S. Chatterjee
Affiliation:
Department of Electronics and Electrical Communication Engineering, Indian Institute of Technology, Kharagpur, India.
C. K. Maiti
Affiliation:
Department of Electronics and Electrical Communication Engineering, Indian Institute of Technology, Kharagpur, India.
Get access

Abstract

We have investigated the structural and electrical properties of as-prepared and rapid thermal oxynitride films on C+ implanted solid phase epitaxially grown SiC. The oxynitride was grown using N2O. The C concentration of the samples was estimated to be 1, 2 and 5 at. %. From the infrared spectra, samples with 1 and 2 at. % carbon showed that the carbon was substitutionally incorporated into the silicon. No precipitation of SiC was detected. However, for the 5 at. % C sample, some precipitation was observed as indicated by a broad peak at ∼800 cm−1. The oxynitride films showed the Si-O-Si stretching mode at ∼1100 cm−1. The shoulder at 980–1067 cm−1 was due to the O-Si-N bond. The peak at 830 cm−1 was due to the Si-N and Si-C bonds and C-O complex vibrational mode was observed at 663 cm−1. Electrical characterization of the oxynitride films was carried out using the MOS capacitor structure. The interface state density was found to range between 5.7×1011 to 3.35×1012 cm−2eV−1 and increased with an increase in the C concentration. The electrical breakdown field was found to be in the range of 5–7 MV cm−1 and reduced with an increase in C concentration. The charge-to-breakdown value was measured and decreased with an increase in C concentration.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 640: Symposium H – Silicon Carbide-Materials, Processing, and Devices , 2000 , H5.14
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Iyer, S. S., Patton, L. G., Stork, J. M., Meyerson, B. S., and Harame, D. L., IEEE Trans. Electron. Dev. 36, 2043 (1989).Google Scholar
2. Hwang, H., Ting, W., Kwong, D. L., Lee, J., IEEE IEDM Tech. Dig. 1990, 421.Google Scholar
3. Uchiyama, B., Fukuda, H., Hayashi, T., Iwabuchi, T., and Ohno, S., IEEE IEDM Tech Dig 1990, 425.Google Scholar
4. Singh, R., J. Appl. Phys. 63, R59 (1988).Google Scholar
5. Pressel, K., Franz, M., Kruger, D., Osten, H. J., Garrido, B., and Morante, J. R., J. Vac. Sci. Technol. B 16(3), 1757 (1998).Google Scholar
6. Garrido, B., Morante, J. R., Franz, M., Pressel, K., Kruger, D., Zaumseil, P., and Osten, H. J., J. Appl. Phys. 85, 833 (1999).Google Scholar
7. Newman, R. C. and Willis, J. B., J. Phys. Chem. Solids 26, 373 (1965).Google Scholar
8. Spritzer, W. G., Kleinman, D. A., and Frosch, C. J., Phys. Rev. 113, 133 (1959).Google Scholar
9. Lange, P., Bernt, H., Hartmannsgruber, E., and Naumann, F., J. Electrochem. Soc. 141, 259 (1994).Google Scholar
10. Onney, C. and Pantano, C. G., J. Vac. Sci. Technol. A 15, 1597 (1997).Google Scholar
11. Osten, H. J. and Gaworzewski, P., J. Appl. Phys. 82, 4977 (1997).Google Scholar