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Structural Properties of High Electronic Quality a-Si1-xCx:H by Infrared Spectroscopy

Published online by Cambridge University Press:  21 February 2011

K. Eberhardt ,
E. Lotter ,
M. Heintze ,
H.-D. Mohring  and
G.H. Bauer
K. Eberhardt
Affiliation:
Institut für Physikalische Elektronik, Universität Stuttgart, Pfaffenwaldring 47, 7000 Stuttgart-80, Germany
E. Lotter
Affiliation:
Institut für Physikalische Elektronik, Universität Stuttgart, Pfaffenwaldring 47, 7000 Stuttgart-80, Germany
M. Heintze
Affiliation:
Institut für Physikalische Elektronik, Universität Stuttgart, Pfaffenwaldring 47, 7000 Stuttgart-80, Germany
H.-D. Mohring
Affiliation:
Institut für Physikalische Elektronik, Universität Stuttgart, Pfaffenwaldring 47, 7000 Stuttgart-80, Germany
G.H. Bauer
Affiliation:
Institut für Physikalische Elektronik, Universität Stuttgart, Pfaffenwaldring 47, 7000 Stuttgart-80, Germany
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Abstract

Infrared (ir) spectroscopy is used to investigate the structural properties of a-SiC:H in a wide compositional range and as a function of film thickness. Hydrogen content NH increases considerably with increasing carbon fraction. For low carbon alloys this is mainly due to an increase of hydrogen bonded to silicon, incorporated in a mono- or dihydride form. Above Eg=2.3eV the proportion of hydrogen incorporated in C-H bonds increases considerably. Oxidation of high C alloys is observed. Converting experimental transmission exactly into absorption data yields thickness independent NH values. It is shown that the previously reported discrepancy between the hydrogen content calculated from ir and nuclear reaction techniques is an artifact of the ir analysis.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 673
Copyright
Copyright © Materials Research Society 1992

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References

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