Hostname: page-component-745bb68f8f-cphqk Total loading time: 0 Render date: 2025-01-15T01:16:43.525Z Has data issue: false hasContentIssue false
  • English
  • Français

Structural Study on Crystallization of a-Ge Using Exafs

Published online by Cambridge University Press:  26 February 2011

Masatoshi Wakagi ,
T. Hirano ,
M. Hanazono ,
M. Chigasaki ,
O. Abe  and
A. Nakano
Masatoshi Wakagi
Affiliation:
Hitachi Research Laboratory, Hitachi, Ltd., 4026 Kuji-cho, Hitachi-shi, 319-12 Japan
T. Hirano
Affiliation:
Hitachi Research Laboratory, Hitachi, Ltd., 4026 Kuji-cho, Hitachi-shi, 319-12 Japan
M. Hanazono
Affiliation:
Hitachi Research Laboratory, Hitachi, Ltd., 4026 Kuji-cho, Hitachi-shi, 319-12 Japan
M. Chigasaki
Affiliation:
Hitachi Research Laboratory, Hitachi, Ltd., 4026 Kuji-cho, Hitachi-shi, 319-12 Japan
O. Abe
Affiliation:
Production Engineering Research Laboratory, Hitachi, Ltd., 292 Yoshida-cho, Totuka-ku, Yokohama, 244 Japan
A. Nakano
Affiliation:
Production Engineering Research Laboratory, Hitachi, Ltd., 292 Yoshida-cho, Totuka-ku, Yokohama, 244 Japan
Get access

Abstract

Extended x-ray absorption fine structure (EXAFS) measurements were made on a-Ge and a-Ge:H films which were prepared by sputtering and were annealed at temperatures between 300 and 450° C.The first nearest neighbor distance and the Debye-valler factor were investigated. These values decrease rapidly on the crystallization of the samples. The relationship between them was analyzed in respect of tvo-body potential. The potential of amorphous state is considered to be affected by unharmonic term.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 118: Symposium E – Amorphous Silicon Technology , 1988 , 91
Copyright
Copyright © Materials Research Society 1988

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Agarwal, S. C., Phys. Rev. B 7, 685 (1973)Google Scholar
2. Hudgens, S. J., Phys. Rev. B 7, 2481 (1973)CrossRefGoogle Scholar
3. Germain, P., Zellama, K., Squelard, S., Bourgoin, J. C., and Cheorghin, A., J. Appl. Phys. 50, 6986 (1979)Google Scholar
4. Gonzalez-Hernandez, J. and Tsu, R., Appl. Phys. Lett. 42, 90 (1983)CrossRefGoogle Scholar
5. Okada, T., Wakayama, H., Kasahara, H., and Yamamoto, Y., J. Phys. Soc. Jpn. 55, 1415 (1986)Google Scholar
6. Evangelisti, F., Proietti, M. G., Balzarotti, A., Commin, F., Incoccia, L., and Mobilio, S., Solid State Commmun. 37, 413 (1981).Google Scholar
7. Stern, E. A., Bouldin, C. E., von Roedern, B., and Azoulay, J., Phys. Rev. B 27, 6557 (1983).Google Scholar
8. Paesler, N. A., Sayers, D. E., Tsu, R., and Gonzalez-Hernandez, J., Phys. Rev. 28, 4550 (1983).Google Scholar
9. Wakagi, M., Chigasaki, M., and Nomura, M., J. Phys. Soc. Jpn. 56, 1765 (1987).Google Scholar
10. Fang, C. J., Gruntz, K. J., Ley, L., and Cardona, M., J. Non-Cryst. Solids 35–36, 255 (1980).Google Scholar
11. Eisenberger, P. and Brown, G. S., Solid State Commun. 29, 481 (1979).Google Scholar
12. Bouldin, C. E., Stern, E. A., von Roedern, B., and Azoulay, J., Phys. Rev. B 30, 4462 (1984).Google Scholar