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Structure and Chemistry of Ti Overlayers on α-Αl2O3(0001)

Published online by Cambridge University Press:  10 February 2011

S. Bernath ,
T. Wagner ,
S. Hofmann  and
M. Rühle
S. Bernath
Affiliation:
Max-Planck-Institut für Metallforschung, Seestrasse 92, 70174 Stuttgart, Germany
T. Wagner
Affiliation:
Max-Planck-Institut für Metallforschung, Seestrasse 92, 70174 Stuttgart, Germany
S. Hofmann
Affiliation:
National Research Institute for Metals, Tsukuba Laboratories, Tsukuba-SHI, Japan
M. Rühle
Affiliation:
Max-Planck-Institut für Metallforschung, Seestrasse 92, 70174 Stuttgart, Germany
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Abstract

Ti thin films were grown by molecular-beam epitaxy (MBE) on α-Al2O3(0001) substrates. During room temperature deposition, in the very initial growth stage, AES investigations revealed a chemical reaction between the Ti and the α-Al2O3 substrate. An analysis of the AES data based on simple assumptions showed that ∼ 2 monolayers of Ti are oxidized. However, HRTEM analysis indicated an atomically smooth, incoherent interface, without a reaction layer. Reflection high-energy electron diffraction (RHEED) analysis revealed an epitaxial orientation relationship (0001)<2110> Ti ∥ (0001)<1010>Al2O3 between Ti and α-Al2O3(0001).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 472: Symposium I – Polycrystalline Thin Films - Structure, Texture, Properties..III , 1997 , 137
Copyright
Copyright © Materials Research Society 1997

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References

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