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Structure and Electronic Properties of Misfit Dislocations in ZnSe/GaAs(001) Heterojunctions

Published online by Cambridge University Press:  22 February 2011

Y. Chen ,
X. Liu ,
E. Weber ,
E. D. Bourret ,
D. J. Olego ,
D. R. Dorman ,
J. M. Gaines ,
N. R. Tasker ,
Z. Liliental-Weber  and
E. Haller
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Y. Chen
Affiliation:
Materials Science Division, Lawrence Berkeley Laboratory, University of California, Berkeley, CA 94720 Department of Materials Science and Mineral Engineering, University of California, Berkeley, CA 94720
X. Liu
Affiliation:
Department of Materials Science and Mineral Engineering, University of California, Berkeley, CA 94720
E. Weber
Affiliation:
Materials Science Division, Lawrence Berkeley Laboratory, University of California, Berkeley, CA 94720 Department of Materials Science and Mineral Engineering, University of California, Berkeley, CA 94720
E. D. Bourret
Affiliation:
Materials Science Division, Lawrence Berkeley Laboratory, University of California, Berkeley, CA 94720
D. J. Olego
Affiliation:
Philips Laboratories, Briarcliff Manor, NY 10510
D. R. Dorman
Affiliation:
Philips Laboratories, Briarcliff Manor, NY 10510
J. M. Gaines
Affiliation:
Philips Laboratories, Briarcliff Manor, NY 10510
N. R. Tasker
Affiliation:
Philips Laboratories, Briarcliff Manor, NY 10510
Z. Liliental-Weber
Affiliation:
Materials Science Division, Lawrence Berkeley Laboratory, University of California, Berkeley, CA 94720
E. Haller
Affiliation:
Materials Science Division, Lawrence Berkeley Laboratory, University of California, Berkeley, CA 94720 Department of Materials Science and Mineral Engineering, University of California, Berkeley, CA 94720
J. Washburn
Affiliation:
Materials Science Division, Lawrence Berkeley Laboratory, University of California, Berkeley, CA 94720 Department of Materials Science and Mineral Engineering, University of California, Berkeley, CA 94720
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Abstract

Studies of the structure and electrical properties of regular and irregular misfit dislocations in undoped and N-doped ZnSe epilayers grown on GaAs(001) substrates by transmission electron microscopy (TEM), cathodoluminescence (CL) are reported. In undoped ZnSe epilayers, two sets of misfit dislocation arrays were observed: a straight orthogonal array along [110] and, and an irregular array roughly along [100] and [010] directions. The CL observations suggest that the irregular dislocations trap carriers more efficiently than the dislocations along <110>, possibly due to the high density of kinks existing along the zig-zag irregular dislocations. These irregular dislocations can be eliminated by doping nitrogen in the ZnSe epilayer with [N]≥l×1018 cm−3.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 340: Symposium E – Compound Semiconductor Epitaxy , 1994 , 491
Copyright
Copyright © Materials Research Society 1994

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References

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