Hostname: page-component-745bb68f8f-5r2nc Total loading time: 0 Render date: 2025-01-30T00:06:44.501Z Has data issue: false hasContentIssue false
  • English
  • Français

Structure, Composition, and Properties of Mocvd ZrO2 Thin Films

Published online by Cambridge University Press:  21 February 2011

Seshu B. Desu ,
Tian Shi  and
Chi K. Kwok
Seshu B. Desu
Affiliation:
Department of Materials Engineering, Virginia Polytechnic Institute and State university, Blacksburg, VA 24061.
Tian Shi
Affiliation:
Department of Materials Engineering, Virginia Polytechnic Institute and State university, Blacksburg, VA 24061.
Chi K. Kwok
Affiliation:
Department of Materials Engineering, Virginia Polytechnic Institute and State university, Blacksburg, VA 24061.
Get access

Abstract

ZrO2 films were deposited on silicon substrates at temperatures from 350 to 550 °C by metallorganic chemical vapor deposition (MOCVD) using zirconium acetylacetonates. Depositions were carried out at both atmospheric and low pressures. The optical properties, structure, microstructure, and composition of these films were characterized by Ellipsometer, X-ray diffraction, scanning electron microscopy (SEM), and electron spectroscopy for chemical analysis (ESCA), respectively. The deposition was kinetically controlled at low temperatures and mass transfer controlled at high temperatures. Use of zirconium (IV) acetylacetonate resulted in cubic ZrO2 with some carbon contamination whereas, tetragonal pure ZrO2 were obtained with the precursor zirconium (IV) trifluroacetylacetonate. The tetragonal ZrO2 films are fine grained and showed preferential orientation. The measured values of dielectric constant, refractive index, and electrical resistivity of ZrO2 films are 18, 2.0, and 5E13 Ohm.cm, respectively.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 168 , 1989 , 349
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1)Izumi, K. et al., J.Am.Ceram.Soc., 72, 1465 (1989).Google Scholar
2)Brennfleck, K. et al., in Proc. 8 th Int. Conf. CVD, edited by Blocher, J.M. et al., The Electrochemical Soc., p672 (1981).Google Scholar
3)Tauber, R.N., et al, J.Electrochem Soc., 118, 747 (1971).Google Scholar
4)Mazdiyansi, K.S. and Lynch, C.T., USAF Rept. ASD-TDR-63–322 (1963).Google Scholar
5)Balog, M. et al., J. Crystal Growth, 17, 298 (1972).Google Scholar
6)Desu, S.B., J.Am.Ceram.Soc., 72, 1615 (1989).Google Scholar
7)Desu, S.B. and Kalidindi, S.R., Mat.Res.Symp.Proc., 131, 307 (1989).Google Scholar
8)Lange, F.F., J.Mat.Sci., 17, 225 (1982).Google Scholar