Hostname: page-component-6bf8c574d5-b4m5d Total loading time: 0 Render date: 2025-02-22T08:09:16.286Z Has data issue: false hasContentIssue false
  • English
  • Français

Structured Abrasive CMP: Length Scales, Subpads, and Planarization

Published online by Cambridge University Press:  10 February 2011

D. P. Goetz
D. P. Goetz*
Affiliation:
3M Advanced Materials Technology Center Building 201–1W-28, 3M Center, St. Paul, MN 55144–1000, dpgoetz@mmm.com
Get access

Abstract

Chemical-Mechanical Planarization with structured abrasive uses a subpad to manage the pressure variations due to loading over a range of length scales. The effect of subpad construction on pressure responses related to those scales is illustrated.

A minimum length scale for the effect of the subpad is established via contact mechanics. Differences between one- and two-layer subpads are shown. Uniform compression, point loading, and edge exclusion are considered briefly. A model of the subpad as a plate on an elastic foundation is applied to the problem of die doming. The roles of process pressure, die size, and subpad construction are illustrated. Planarization at the intra-die, die, and wafer scales are related to the subpad construction.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 566: Symposium P – Chemical-Mechanical Poilshing-Fundamentals and Challenges , 1999 , 51
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Funkenbusch, E. F., “A Slurry-Free CMP Technique for Oxide Planarization ”, Proc. CMP Technology for ULSI Interconnection Symp. (Semicon West) San Francisco, July 14, 1998.Google Scholar
2. Fayolle, M., Lugand, J., Weimar, F., and Bruxvoort, W., “Evaluation of a New Slurry-Free CMP Technique for Oxide Planarization”, Proc. Third Int. Chemical-Mechanical Planarization for ULSI Multilevel Interconnection Conf. (CMP-MIC) Santa Clara, CA, February 19–20, 1998.Google Scholar
3. Goetz, D. P., “The Effect of Subpad Construction on Pattern Density Effects for Slurry-free CMP”, Proc. Fourth International Chemical-Mechanical Planarization for ULSI Multilevel Interconnection Conf. (CMP-MIC) Santa Clara, CA, February 11–12, 1999.Google Scholar
4. Johnson, K. L., Contact Mechanics (Cambridge University Press, Cambridge, 1985), p. 50–5 1.10.1017/CBO9781139171731Google Scholar
5. Timoshenko, S. and Woinowsky-Krieger, S., Theory of Plates and Shells, 2nd ed. (McGraw-Hill, New York, 1959), p. 270.Google Scholar
6. Ibid., p. 267 Google Scholar
7. Goetz, D. P., “3M Subpad Mechanics: A Framework for Characterization”, Proc. Northern California Chapter of the AVS CMP Users Group, San Jose, CA, September 2, 1998.Google Scholar