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Studies of Ge-Sb-Te Phase Change Materials At and Above Melting Temperatures and Set to Reset Transition of Memory Devices

Published online by Cambridge University Press:  01 February 2011

Semyon D Savransky  and
Guy Wicker
Semyon D Savransky
Affiliation:
chalcogenide_glasses@yahoo.com
Guy Wicker
Affiliation:
chalcogenide1glasses@yahoo.com, The TRIZ Experts, Newark, California, United States
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Abstract

The results of calorimetric and electrical studies of bulk Ge2Sb2Te5 and GeSb2Te4 alloys around melting temperature Tm are presented together with characteristics of phase-change memory devices from such alloys. The endothermic melting region is wider in Ge2Sb2Te5 than GeSb2Te4. Electrical resistivities of the alloys in this region have semiconductor characteristics. The width of the melting region correlates with breadth of set to reset transition in devices. This empirical correlation is probably important for alloy selection for multi-level memory cells.

Keywords

devicesliquidmemory
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1251: Symposium H – Phase-Change Materials for Memory and Reconfigurable Electronics Applications , 2010 , 1251-H03-02
Copyright
Copyright © Materials Research Society 2010

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References

1 Wicker, G. C., Proc. SPIE Int. Soc. Opt. Eng. 3891, 2 (1999); T. A. Lowrey, S. J. Hudgens, W. Czubatyj, C. H. Dennison, S. A. Kostylev, and G. C. Wicker in Advanced data storage materials and characterization techniques, edited by L. Hesselink and A., Mijiritskii (Mater. Res. Soc. Symp. Proc. 804, Pittsburgh, PA, 2004) paper HH2.1.Google Scholar
2 Bedeschi, F., Fackenthal, R., Resta, C., Donze, E.M., Jagasivamani, M., Buda, E.C., Pellizzer, F., Chow, D.W., Cabrini, A., Calvi, G.M.A., Faravelli, R., Fantini, A., Torelli, G., Mills, D., Gastaldi, R., and Casagrande, G., IEEE Journal of Solid-State Circuits, 44, 217 (2009).Google Scholar
3 Speyer, R.F., Thermal analysis of materials (Marcel Dekker, New York, 1994) 285pp.Google Scholar
4 Savransky, S.D., Soviet J. Phys. Chem. Glasses 13, 659 (1987); J. Non-Crystal. Solids 101, 130 (1988).Google Scholar
5 Karpov, V. G., Kryukov, Y. A., Savransky, S. D., and Karpov, I. V., Appl. Phys. Lett. 90, 123504 (2007); I. Karpov, S. Savransky, V. Karpov, Proc.22nd IEEE Non-Volatile Semiconductor Memory Workshop 26, 56 (2007).Google Scholar
6 Regel, A. R.' and Glazov, V.M., Physical Properties of Semiconductor Melts (Nauka, Moscow, 1980), 295pp (in Russian); A. A. Aivazov, B.G. Budagyan, S.P. Vichrov, and A.I. Popov, Disordered Semiconductors ((MEI, Moscow, 1995) 352pp. (in Russian).Google Scholar