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Studies of SiH2Ci2/H2 Gas Phase Chemistry for Selective Thin Film Growth of Crystalline Silicon, c-Si, Using Remote Plasma Enhanced Chemical Vapor Deposition

Published online by Cambridge University Press:  22 February 2011

J. A. Theil ,
G. Lucovsky ,
S. V. Hattangady ,
G. G. Fountain  and
R. J. Markunas
J. A. Theil
Affiliation:
NC State Univ., Depts. of Physics, and Materials Science and Engineering, Raleigh, NC
G. Lucovsky
Affiliation:
NC State Univ., Depts. of Physics, and Materials Science and Engineering, Raleigh, NC
S. V. Hattangady
Affiliation:
NC State Univ., Depts. of Physics, and Materials Science and Engineering, Raleigh, NC
G. G. Fountain
Affiliation:
NC State Univ., Depts. of Physics, and Materials Science and Engineering, Raleigh, NC
R. J. Markunas
Affiliation:
NC State Univ., Depts. of Physics, and Materials Science and Engineering, Raleigh, NC
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Abstract

Conventional high temperature, >800°C, CVD processes, utilizing SiH2Ci2 promote selective deposition of c-Si onto c-Si, but not on SiO2 surfaces. We show that low temperature, 300°C remote PECVD, with rf-excited He plasmas, and SiH2Ci2 and H2 injected downstream, also selectively deposits c-Si on c-Si and not SiO2 surfaces. This preliminary study employs in-situ mass spectrometry, MS, to determine the species responsible for selective deposition process reaction pathways. These MS studies suggest that species responsible for film deposition are Si-containing fragments of the SiH2Ci2 molecule, e.g., SiH2Ci, SiCi2H, etc., while the species responsible for inhibiting deposition on the SiO2 surfaces are by-products of the break-up of the SiH2Ci2 molecule in the gas phase, e.g., H-atoms, HCI and H2Ci+ ions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 220: Symposium B – Silicon Molecular Beam Epitaxy , 1991 , 601
Copyright
Copyright © Materials Research Society 1991

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References

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