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A Study of Point Defects and Cause of Nonstoichiometry in InSb Nanowires

Published online by Cambridge University Press:  01 March 2011

U. Philipose ,
Gopal Sapkota ,
Pradeep Gali  and
Prathyusha Nukala
U. Philipose
Affiliation:
Department of Physics, University of North Texas, 1155 Union Circle, TX 76203-5017, U.S.A
Gopal Sapkota
Affiliation:
Department of Physics, University of North Texas, 1155 Union Circle, TX 76203-5017, U.S.A
Pradeep Gali
Affiliation:
Department of Physics, University of North Texas, 1155 Union Circle, TX 76203-5017, U.S.A
Prathyusha Nukala
Affiliation:
Department of Physics, University of North Texas, 1155 Union Circle, TX 76203-5017, U.S.A
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Abstract

Synthesis of InSb nanowires using chemical vapor deposition (CVD) is technically challenging due to the tuning of III-V vapor pressures. Growth parameters such as the choice of the metal catalyst, growth temperature and vapor pressure of constituents affect the morphology and stoichiometry of InSb nanowires. By controlling the growth temperature, it was possible to grow either stoichiometric InSb nanowires or In nanowires that contained no Sb within detectable limits. We present a simple model to show that the occurrence of native point defects in InSb is influenced by the growth kinetics and by the thermodynamics of defect formation. Results from this model are in good agreement with our experimental findings of the evidence of point defects in these nanowires.

Keywords

nanostructuresemiconductingIII-V
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1302: Symposium W – Nanowires—Growth and Device Assembly for Novel Applications , 2012 , mrsf10-1302-w09-31
Copyright
Copyright © Materials Research Society 2011

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References

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