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Study on the Photoconductive Effect from a P/N Junction Structure Incorporated with Porous Silicon

Published online by Cambridge University Press:  28 February 2011

C. C. Yeh ,
Klaus Y.J. Hsu ,
P. C. Chen  and
H. L. Hwang
C. C. Yeh
Affiliation:
Department of Electrical Engineering, National Tsing Hua University, Hsinchu, Taiwan 300, ROC
Klaus Y.J. Hsu
Affiliation:
Department of Electrical Engineering, National Tsing Hua University, Hsinchu, Taiwan 300, ROC
P. C. Chen
Affiliation:
Department of Electrical Engineering, National Tsing Hua University, Hsinchu, Taiwan 300, ROC
H. L. Hwang
Affiliation:
Department of Electrical Engineering, National Tsing Hua University, Hsinchu, Taiwan 300, ROC
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Abstract

We utilized the conventional planar fabrication technique and the electrochemical etching method to prepare porous Si layers in the p-type region of a p/n junction, which could make the study on the transverse transport property of this material possible. The junctions were fabricated by low energy ion-implantation, with porous Si formed perpendicular to the junction and between two metal contacts. This structure confines currents to the direction parallel to the surface. Distinct features on current-voltage (I-V) curves has been observed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 283: Symposium F – Microcrystalline Semiconductors–Materials Science and Devices , 1992 , 401
Copyright
Copyright © Materials Research Society 1993

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References

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