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Surface Modification of Aluminum Nitride and of Aluminum by Excimer Laser

Published online by Cambridge University Press:  01 January 1992

A.J. Pedraza ,
J.-Y. Zhang  and
H. Esrom
A.J. Pedraza
Affiliation:
Department of Materials Science and Engineering, The University of Tennessee, Knoxville, TN 37996-2200 USA
J.-Y. Zhang
Affiliation:
Asea Brown Boveri AG, Corporate Research, W-6900 Heidelberg, Germany
H. Esrom
Affiliation:
Asea Brown Boveri AG, Corporate Research, W-6900 Heidelberg, Germany
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Abstract

A new technique for selective metallization of aluminum nitride (AIN) has been previously reported (1). It involves the use of an excimer laser to activate the AIN surface followed by electroless plating (Cu,Ni,Au) of the irradiated areas. The mechanism of decomposition of ALN is accompanied by ablation and the formation of an Al film on the substrate surface. Ablation rates are reported here as a function of fluence and number of pulses for three different wavelengths λ = 193 nm (ArF), λ = 248 (KrF) and λ = 351 nm (XeF).

The effect of laser wavelength on the ablation rate is discussed. The ablation rates for Al were zlso measured and are compared with the AIN ablation rates. A numerical thermal model is used to analyze the mechanisms of laser ablation of both materials. The evaporation kinetics are incorporated into the model. The Clausius-Clapeyron approximation is used to make a self-consistent calculation of boiling and decomposition temperatures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 285: Symposium I – Laser Ablation in Materials Processing–Fundamentals and Applications , 1992 , 209
Copyright
Copyright © Materials Research Society 1993

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References

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