Hostname: page-component-6bf8c574d5-956mj Total loading time: 0 Render date: 2025-02-22T17:10:16.887Z Has data issue: false hasContentIssue false
  • English
  • Français

Surface Reconstructions and III-V Stoichiometry: The Case of Cubic and Hexagonal GaN

Published online by Cambridge University Press:  10 February 2011

G. Feuillet ,
P. Hacke ,
H. Okumura ,
H. Hamaguchi ,
K. Ohta ,
K. Balakrishnan  and
S. Yoshida
G. Feuillet
Affiliation:
CEA/Grenoble, 38041 Grenoble Cedex 09 France. e-mail : feuillet@cea.fr
P. Hacke
Affiliation:
Electrotechnical laboratory, Tsukuba, Ibaraki, Japan
H. Okumura
Affiliation:
Electrotechnical laboratory, Tsukuba, Ibaraki, Japan
H. Hamaguchi
Affiliation:
Electrotechnical laboratory, Tsukuba, Ibaraki, Japan
K. Ohta
Affiliation:
Electrotechnical laboratory, Tsukuba, Ibaraki, Japan
K. Balakrishnan
Affiliation:
Electrotechnical laboratory, Tsukuba, Ibaraki, Japan
S. Yoshida
Affiliation:
Electrotechnical laboratory, Tsukuba, Ibaraki, Japan
Get access

Abstract

Surface reconstructions for MBE grown GaN are identified. Different cases are considered according to the type of substrate or crystal symmetry and surface phase diagrams are obtained. Through different examples, it is shown how growth monitoring can be efficiently achieved through the use of surface reconstructions. Finally, from the observation that a residual arsenic overpressure in the MBE chamber changes the surface reconstructions of cubic (001) GaN grown onto 3C-SiC (001) substrates to that commonly observed for GaN growth on (001) GaAs, it is proposed that arsenic might be a surfactant for nitride growth.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 257
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Cho, S. H., Sakamoto, H., Akimoto, K., Okada, Y., Kawabe, M., Jpn. J. Appl. Phys. 34, 1995, p236.Google Scholar
2. Maruyama, T., Cho, S. H. and Akimoto, K., Proc. of the 1995 Intern Conf on Silicon carbide and related Materials IOP publishing 142, p851.Google Scholar
3. Brandt, O., Yang, H., Jenichen, B., Suzuki, Y., Daweritz, L., Ploog, K. H., Phys. Rev. B, 52, N½4, 1996, p.2253 Google Scholar
4. Feuillet, G., Hacke, P., Okumura, H., Yoshida, S., Proc. of the 1st Int. Symposium on Blue Laser and Light Emitting Diodes, Chiba, March 1996, Paper LN4.Google Scholar
5. Hacke, P., Feuillet, G., Okumura, H., Yoshida, S. Appl. Phys. Lett 69 (17) 2507, 1996.Google Scholar
6. Yoshida, S., Okumura, H., Feuillet, G., Hacke, P., Balakrishnan, K., 1996 MRS Fall meeting, invited.Google Scholar
7. Okumura, H., Balakrishnan, K., Feuillet, G., Ohta, K., Hamaguchi, H., Chichibu, S., Ishida, Y., Yoshida, S., 1996 MRS fall meeting.Google Scholar
8. Feuillet, G., Hamaguchi, H., Ohta, K., Hacke, P, Okumura, H., Yoshida, S. Appl. Phys. Lett. to be published.Google Scholar
9. Uhrberg, R.I.G., Bringans, R.D., Bachrach, R.Z., Northrup, J.E., Phys. Rev. Let. 56, 1986, 520 Google Scholar
10. Monch, W., Bauer, R.S., Gant, H., Murschall, R., J.Vac.Sci.Technol. 21 (1982), 498.Google Scholar
11. Jenkins, L.C., Cheng, T.S., Foxon, C.T., Hooper, S.E., Orton, J.W., Novikov, S.V., Tret’yakov, V.V., J.Vac.Sci.Technol., B 13(4) 1995, p1585.Google Scholar
12. Grandjean, N., Massies, J., Delamarre, C., Wang, L.P., Dudon, A., Laval, J.Y., Appl. Phys. Lett. 63(1) 1993 p66.Google Scholar
13. Grandjean, N, Massies, J, Phys.rev. B. 53, 1996, p 13–231.Google Scholar
14. Massies, J., Etienne, P., Dezaly, F., Linh, N.T., Surf.sci. 99, 121, 1980.Google Scholar
15. Kasu, M., Makimoto, T., Kobayashi, N., Appl.Phys.Lett. 68, 955 (1996).Google Scholar