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Switching and Negative Capacitance in Thin Amorphous SiC-Si Heterojunction Diode

Published online by Cambridge University Press:  21 February 2011

K. Sohn  and
H. Lee
K. Sohn
Affiliation:
Department of Electrical and Computer Engineering, New Jersey Institute of Technology, Newark, NJ 07102
H. Lee
Affiliation:
Department of Electrical and Computer Engineering, New Jersey Institute of Technology, Newark, NJ 07102
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Abstract

The heterojunction diode of amorphous SiC-pSi with barrier contacts in which the interface layer, a-SiC, is much less than 100 nm and contains considerable defect densities, exhibited bistable switching with memory. Either state was maintained over weeks without bias. A high-impedance state switched to a low-impedance state with the transient on-state when a threshold voltage was exceeded. After application of current pulses, a low-impedance switched to a high-impedance state. In C-V Measurement, novel negative capacitance phenomenon in the entire bias range which has not been reported yet was demonstrated. Experimental results show that this negative capacitance is due to the inductive reactance. This phenomenon presents the possibility of replacing inductor even at zero bias.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 318: Symposium Ca – Interface Control of Electrical, Chemical, and Mechanical Properties , 1993 , 483
Copyright
Copyright © Materials Research Society 1994

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References

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