Hostname: page-component-745bb68f8f-g4j75 Total loading time: 0 Render date: 2025-01-30T00:01:40.773Z Has data issue: false hasContentIssue false
  • English
  • Français

TEM Investigation of Si/βFeSi2/Si (100) and (111) Heterostructures Formed by Fe Implantation

Published online by Cambridge University Press:  28 February 2011

C. W. T. Bulle-Lieuwma ,
D. J. Oostra  and
D. E. W. Vandenhoudt
C. W. T. Bulle-Lieuwma
Affiliation:
Philips Research Laboratories, P.O. Box 80000, 5600 JA Eindhoven, The, Netherlands
D. J. Oostra
Affiliation:
Philips Research Laboratories, P.O. Box 80000, 5600 JA Eindhoven, The, Netherlands
D. E. W. Vandenhoudt
Affiliation:
Philips Research Laboratories, P.O. Box 80000, 5600 JA Eindhoven, The, Netherlands
Get access

Abstract

Si/βFeSi2/Si (100) and (111) structures were obtained by implantation of 450 keV Fe+ ions with a dose of 6×1017 Fe+ ions/ cm2 into Si substrates. A continuous buried βFeSi2 layer with thickness of 250 nm was formed during subsequent annealing. By transmission electron microscopy it has been found that for (100) Si the layer consists of βFeSi2 grains with lateral dimensions of approximately O.5 μm and for (111) Si of grains of 5 μm in size. The βFeSi2 films exhibit a high degree of epitaxy with the Si substrate. A detailed structural examination shows the occurrence of several epitaxial relationships of βFeSi2 with the Si substrate. In contrast to two-dimensional surface growth techniques, the formation of a buried layer by implantation occurs by a three-dimensional growth process by the coalescence of βFeSi2 precipitates. The different orientations of the βFeSi2 grains in the buried layer are already established by the orientation of the precipitates formed during implantation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 283: Symposium F – Microcrystalline Semiconductors–Materials Science and Devices , 1992 , 885
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Massalski, T.B., in ‘Binary Alloy Phase Diagrams’ (American Society for Metals, Metals Park, OH, 1986)Google Scholar
[2] Dusausoy, Y., Protas, J., Wandji, R. and Roques, B., Acta Cryst. B27, 1209 (1971)Google Scholar
[3] Bost, M.C. and Mahan, J.E., J. Appl. Phys. 64, 2034 (1988)Google Scholar
[4] Dimitriades, C.A., Werner, J.H., Logothetidis, S., Stutzmann, M., Weber, J. and Nesper, R., J. Appl. Phys. 68, 1726 (1990)Google Scholar
[5] Eppenga, R.,, J. Appl. Phys. 68, 3027 (1990)Google Scholar
[6] Christensen, N.E., Phys. Rev. B42, 7148 (1990)Google Scholar
[7] Cherief, N., d'Anterroches, C., Cinti, R.C., Nguyen Tan, T.A. and Derrien, J., Appl. Phys. Lett. 55, 1671 (1989)Google Scholar
[8] Mahan, J. E., Geib, K. M., Robinson, G.Y., Long, R.G., Xinghua, Yan, Bai, G, Nicolet, M-A. and Nathan, M., Appl. Phys. Lett. 56 (21), 2126 (1990)Google Scholar
[9] Oostra, D.J., Vandenhoudt, D.E.W., Bulle-Lieuwma, C.W.T. and Naburgh, E.P., Appl. Phys. Lett. 59 (14), 1737 (1991)Google Scholar
[10] Radermacher, K., Mantl, S., Dieker, Ch. and Luth, H., Appl. Phys. Lett. 59, 2145 (1991)Google Scholar
[11] Gerthsen, D., Radermacher, K., Dieker, Ch. and Mantl, S., J. Appl. Phys. 71 (8), 2788 (1992)Google Scholar
[12] Bulle-Lieuwma, C.W.T., van Ommen, A.H., Hornstra, J. and Aussems, C.N.A.M., J. Appl. Phys. 71 (5), 2211 (1992)Google Scholar