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A TEM Study of the Structure of Polycrystalline Si Films on (111) Si Substrates Grown by Low Pressure Chemical Vapor Deposition

Published online by Cambridge University Press:  22 February 2011

Scott A. Piette ,
Chris J. Kiely  and
J. Gary Eden
Scott A. Piette
Affiliation:
University of Illinois, Department of Electrical and Computer Engineering, Urbana, Illinois 61801
Chris J. Kiely
Affiliation:
University of Illinois, Department of Electrical and Computer Engineering, Urbana, Illinois 61801
J. Gary Eden
Affiliation:
University of Illinois, Department of Electrical and Computer Engineering, Urbana, Illinois 61801
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Abstract

A systematic series of films have been deposited on Si (111) wafers by the pyrolytic decomposition of disilane in a low pressure CVD reactor at temperatures below 765°C, at a variety of Si2H6 partial pressures. Usually, large columnar Si grains nucleate with the [110] fiber axis parallel to the [111] substrate normal, and exhibit a random arrangement of azimuthal orientations about this axis. Fine scale microtwinning and sub-grain boundaries which are often seen within individual columnar grains have been characterized by HREM. The facetted boundaries between individual columnar grains have also been characterized. The correlation between typical grain size, defect densities and Si2 H6 partial pressure is presented and the effect of changing partial pressure during growth is shown to be detrimental to film quality. Finally it is noted that randomly oriented polycrystalline Si films can be formed under certain growth conditions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 106: Symposium G – Polysilicon Films and Interfaces , 1987 , 15
Copyright
Copyright © Materials Research Society 1988

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References

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