Hostname: page-component-6bf8c574d5-vmclg Total loading time: 0 Render date: 2025-02-22T23:11:11.318Z Has data issue: false hasContentIssue false
  • English
  • Français

Theoretical and Experimental Analysis of Amorphous Silicon Image Sensor

Published online by Cambridge University Press:  21 February 2011

Chih-Yuang Su ,
Ying-Wen Su  and
Huey-Liang Hwang
Chih-Yuang Su
Affiliation:
Department of Electrical Engineering, National Tsing Hua University, Hsinchu, Taiwan 30043, R. O. C.
Ying-Wen Su
Affiliation:
Department of Electrical Engineering, National Tsing Hua University, Hsinchu, Taiwan 30043, R. O. C.
Huey-Liang Hwang
Affiliation:
Department of Electrical Engineering, National Tsing Hua University, Hsinchu, Taiwan 30043, R. O. C.
Get access

Abstract

The experimental results for different structures of contact image sensor are reported in this paper, which includes Schottky barrier, p-i junction, p-l-n junction, and MIS structures. The J-V characteristics of p-i-n a-Si: H contact image sensor under dark and illuminated conditions have been simulated by solving the Poisson's equation and the continuity equations, and the results are correlated with the experiments. The dependence of the dark and photo currents on the parameters such as the density of states in the gap, intrinsic layer width, dopant concentrations of p* layer and n+ layer are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 219: Symposium A – Amorphous Silicon Technology - 1991 , 1991 , 185
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Arya, R. R., Catalano, A., and Oswald, R. S.. Appl. Phys. Lett., 49: 1089, 1986.Google Scholar
[2] Schade, H. and Smith, Z. E.. J. Appl. Phys., 57: 568, 1985.Google Scholar
[3] Su, Y.-W. and Hwang, H.-L.. Thin Solid Films, (in press).Google Scholar
[4] Hack, M. and Shur, M.. J. Appl. Phys., 58: 997, 1985.Google Scholar
[5] Tasaki, H., Kim, W. Y., Hallerdt, M., Konagai, M., and Takahashi, K.. J. Appl. Phys., 63: 550, 1988.Google Scholar
[6] Gray, J. L.. IEEE Trans. Electron Devices, ED- 36(5): 906, 1989.Google Scholar
[7] Swatz, G. A.. J. Appl. Phys., 53(1): 712, 1982.Google Scholar
[8] Miyamoto, H., Konagai, M., and Takashi, K.. J. J. Appl. Phys., 20(9): 1691, 1981.Google Scholar
[9] , Sakata and Hayashi, Y.. Appl. Phys., A37: 153, 1985.Google Scholar
[10] Muller, G., Mannsperger, H., and Kalbitzer, S.. Phil. Mag., 55B: 257, 1986.Google Scholar
[11] Simmons, J. G. and Taylor, G. W.. Phys. Rev., B4: 502, 1971.Google Scholar
[12] Shockley, W. and Read, W. T.. Phys. Rev., 87: 835, 1952.Google Scholar
[13] Gummel, H. K.. IEEE Trans. Electron Devices, ED- 11: 455, 1964.Google Scholar