Hostname: page-component-745bb68f8f-d8cs5 Total loading time: 0 Render date: 2025-02-05T21:25:28.422Z Has data issue: false hasContentIssue false
  • English
  • Français

Thermal CVD of Amorphous Germanium Films From 2, 5-Bis (Tert.-Butyl) -2, 5-Diaza-l-Germa-Cyclopentane Organometallic Precursor

Published online by Cambridge University Press:  16 February 2011

F. Glatz ,
J. prokop ,
S. Vepřek ,
F.R. Klingan  and
W.A. Herrmann
F. Glatz
Affiliation:
Institute for Chemistry of Information Recording, Technical University Munich, Lichtenbergstr. 4, D-85747 Garching, Germany
J. prokop
Affiliation:
Institute for Chemistry of Information Recording, Technical University Munich, Lichtenbergstr. 4, D-85747 Garching, Germany
S. Vepřek
Affiliation:
Institute for Chemistry of Information Recording, Technical University Munich, Lichtenbergstr. 4, D-85747 Garching, Germany
F.R. Klingan
Affiliation:
Institute for Inorganic Chemistry, Technical University Munich, Lichtenbergstr. 4, D-85747 Garching, Germany
W.A. Herrmann
Affiliation:
Institute for Inorganic Chemistry, Technical University Munich, Lichtenbergstr. 4, D-85747 Garching, Germany
Get access

Abstract

A novel organometallic germylene precursor has been synthesized and used for the deposition of amorphous germanium by thermal OM CVD at temperatures below 300°C. The films are of high purity with an oxygen content below the present detection limit of about < 1018 cm−3. Preliminary results on the electronic properties are reported.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 336: Symposium A – Amorphous Silicon Technology - 1994 , 1994 , 541
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Karg, F.H., Hirschauer, B., Kasper, W. and Pierz, K., Solar Energy Mater. 22, 169 (1991)CrossRefGoogle Scholar
[2] Wickboldt, P., Jones, S.J., Turner, W.A., Marques, F.C., Pang, D., Wetzel, A.E., Paul, W. and Chen, J.H., Phil. Mag. B 64, 655 (1991)CrossRefGoogle Scholar
[3] Glatz, F., Konwitschny, R., Veprek-Heijman, M.G.J. and Veprek, S., this VolumeGoogle Scholar
[4] Herrmann, W.A., Denk, M., Behm, J., Scherer, W., Klingan, F.-R., Bock, H., Solouki, B. and Wagner, M., Angew. Chem., Int. Edition (Engl.) 31, 1485 (1992)Google Scholar
[5] Glatz, F., Ph D Thesis, Technical University Munich 1993 Google Scholar
The calibration has been done on a-Ge films deposited by plasma CVD from germane at floating potential and subsequently oxidized. During the step-vize oxidation the in-tegralabsorption in the Ge-0 stretching mode region around 818 cm−2 has been measured and the absolute amount of incorporated oxygen has been determined by the weight increase of the sample. We have checked by the IR spectroscopy that oxygen was the only impurity incorporated into the f i lnu The calibration factor determined in this way was 4.1018 cm−2.Google Scholar