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Time-Dependent Reliability Of The Interface Between A-C:F And Inorganic Dielectrics

Published online by Cambridge University Press:  10 February 2011

Kazuhiko Endo ,
Keisuke Shinoda ,
Toni Tatsumi ,
Yoshihisa Matsubara ,
Manabu Iguchi  and
Tadahiko Horiuchi
Kazuhiko Endo
Affiliation:
Silicon Systems Research Laboratories, NEC Corporation, 34 Miyukigaoka, Tsukuba, Ibaraki 305 Japan
Keisuke Shinoda
Affiliation:
Silicon Systems Research Laboratories, NEC Corporation, 34 Miyukigaoka, Tsukuba, Ibaraki 305 Japan
Toni Tatsumi
Affiliation:
Silicon Systems Research Laboratories, NEC Corporation, 34 Miyukigaoka, Tsukuba, Ibaraki 305 Japan
Yoshihisa Matsubara
Affiliation:
ULSI Device Development Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229, Japan.
Manabu Iguchi
Affiliation:
ULSI Device Development Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229, Japan.
Tadahiko Horiuchi
Affiliation:
ULSI Device Development Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229, Japan.
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Abstract

We have investigated the time dependent reliability of a-C:F films, and found that SiO 2 or SiN cover layers on a-C:F films peeled off partially after about a week when the a-C:F film was grown from C4F8. and annealed in N2 or grown from C4F8+CH4. The interfaces between a-C:F and SiN have a mixing layer indicating a radical reaction at the interface. An a-C:F film grown from C4F8+CH4 has greater water-absorption than a film grown from C4F8 Thus, hydrolysis and radical formation after annealing may cause degradation of the interface. We found that hydrogen annealing effectively decreases the dielectric constant and suppresses such time-dependent degradation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 511: Symposium E – Low Dielectric Constant Materials IV , 1998 , 365
Copyright
Copyright © Materials Research Society 1998

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References

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