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Time-Resolved Spectroscopy of Plasma Resonances In Highly Excited Silicon And Germanium

Published online by Cambridge University Press:  26 February 2011

A. M. Malvezzi ,
C. Y. Huang ,
H. Kurz  and
N. Bloembergen
A. M. Malvezzi
Affiliation:
Division of Applied Sciences, Harvard Universitu, Cambridge, MA 02138
C. Y. Huang
Affiliation:
Los Alamos National Laboratory, Los Alamos, NM 87545
H. Kurz
Affiliation:
Technical University Aachen, D-5100 Aachen, Federal Republic of Germany
N. Bloembergen
Affiliation:
Division of Applied Sciences, Harvard Universitu, Cambridge, MA 02138
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Abstract

The dynamics of the electron-hole plasma in silicon and germanium samples irradiated by 20 ps, 532 nm laser pulses has been investigated in the near infrared by time-resolved picosecond optical spectroscopy. The experimental reflectivities and transmissions are compared with the redictions of the thermal model for degenerate carrier distributions through the Drue iformalism. Above a certain fluence, a significant deviation between measured and calculated values indicates a strong increase of the recombination rate as soon as the plasma resonances become comparable with the band gaps. These new plasmon-aided recombination channels are particularly pronounced in germanium.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 51: Symposium A – Beam-Solid Interactions and Phase Transformations , 1985 , 201
Copyright
Copyright © Materials Research Society 1985

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References

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