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Transport Properties and Electron Microscopy Studies of Ion Implanted Graphite

Published online by Cambridge University Press:  25 February 2011

T.C. Chieu ,
B.S. Elman ,
L. Salamanca-Riba ,
M. Endo  and
G. Dresselhaus
T.C. Chieu
Affiliation:
Department of Electrical Engineering and Computer Science;
B.S. Elman
Affiliation:
Department of Physics;
L. Salamanca-Riba
Affiliation:
Department of Physics;
M. Endo
Affiliation:
Francis Bitter National Magnet Laboratory;, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
G. Dresselhaus
Affiliation:
Faculty of Engineering, Shinshu University, Nagano, Japan.
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Abstract

Graphite fibers with high structural perfection and small diameters (∼1 μm) provide a sensitive medium to study the effect of ion implantation on the transport properties of graphite and to observe the defect structure associated with the implantation process. Graphite fibers prepared from the thermal decomposition of benzene and subsequent heat treatment to high temperatures (∼2900°C) have been shown to achieve the high structural perfection necessary to carry out such experiments. Implantation-induced changes in the fiber resistivity are reported and are found to be larger at low temperature, as expected on the basis of residual resistance arguments. Using the lattice fringe imaging technique of high resolution electron microscopy, the implantation-induced defect structure can be observed directly. The results show local expansion of the interlayer graphite planes, with an interlayer separation ranging up to 3.9 Å in the implanted region, compared with ∼3.4 Å for the well-ordered layers beyond the ion penetration depth.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 27: Symposium E – Ion Implantation and Ion Beam Processing of Materials , 1983 , 487
Copyright
Copyright © Materials Research Society 1984

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References

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