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Transport Properties of B-, P-Doped and Undoped 50 kHz PECVD Microcrystalline Silicon

Published online by Cambridge University Press:  21 February 2011

M.A. Hachicha  and
Etienne Bustarret
M.A. Hachicha
Affiliation:
LEPES-CNRS, BP 166x, F-38042, Grenoble, France, (associated to Univ. J. Fourier de Grenoble)
Etienne Bustarret
Affiliation:
Max-Planck-Institute für Festkörperforschung, Heisenbergstr. 1, D-7000 Stuttgart 80, FRG
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Abstract

Undoped 500 nm-thick silicon layers with a crystalline fraction around 95% and an average grain size of 20 nm have been deposited at 350°C by 50 kHz triode PECVD in a H2/SiH4 mixture, in the presence of a magnetic field. Their room temperature (rt) dc conductivity μrt is 0.03 Δ−1cm−1 for a Hall mobility of 0.8 cm 2V−1s−1.

The study by SIMS, infrared absorption, grazing angle x-ray diffraction and Raman scattering spectroscopies of the doped samples shows how the crystalline fraction and the grain size drop as the B2H6/SiH4 and PH3/SiH4 volumic ratios increase from 10 ppm to 1%.

The rt dc conductivity reaches 2 Δ−1 cm−1 (Hall mobility: 15 cm2V−ls−1) for a solid phase density of 1019 cm−3 boron atoms, and 30 Δ−1cm−1 (Hall mobility: 55 cm2V−ls−1) at the maximum P incorporation of 8 × 1020cm−3.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 164: Symposium H – Materials Issues in Microcrystalline Semiconductors , 1989 , 235
Copyright
Copyright © Materials Research Society 1990

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