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Trends in Solute Segregation Behavior During SiliconSolidification

Published online by Cambridge University Press:  15 February 2011

Riccardo Reitanot ,
Patrick M. Smith  and
Michael J. Aziz
Riccardo Reitanot
Affiliation:
Division Of Applied Sciences, Harvard University, Cambridge Ma 02138.
Patrick M. Smith
Affiliation:
Division Of Applied Sciences, Harvard University, Cambridge Ma 02138.
Michael J. Aziz
Affiliation:
Division Of Applied Sciences, Harvard University, Cambridge Ma 02138.
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Abstract

At the high growth rates accessible during pulsed-laser induced melting andsolidification and explosive crystallization, crystal growth kinetics aredominated not by equilibrium thermodynamics, but by the atomistic mechanismsby which crystallization proceeds. These Mechanisms can be probed by testingthe predictions of solute trapping models based on various crystal/Meltinterface structures against Measurements. We have measured the dependenceof solute trapping of several group III, IV, and V elements in silicon onboth interface orientation and crystallization speed. The Aperiodic StepwiseGrowth Model of Goldman and Aziz accurately fits both the velocity andorientation dependence of the solute trapping observed in these systems. Thesuccess of the model implies a ledge structure for the crystal/Meltinterface and a step-flow mechanism for crystal growth. In addition, we haveobserved an empirical inverse correlation between the two free parameters(“diffusive speeds”) in this model and the equilibrium solute partitioncoefficient of a system. This correlation may be used to estimate values ofthe diffusive speeds for other systems in which solute trapping has not beenor cannot be Measured.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 321: Symposium E – Crystallization and Related Phenomena in Amorphous Materials—Ceramics, Metals, Polymers, and Semiconductors , 1993 , 479
Copyright
Copyright © Materials Research Society 1994

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References

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