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Tunneling and anisotropic-tunneling magnetoresistance in iron nanoconstrictions fabricated by focused-ion-beam

Published online by Cambridge University Press:  31 January 2011

Amalio Fernandez-Pacheco ,
Jose M De Teresa ,
Rosa Cordoba  and
Ricardo Ibarra
Amalio Fernandez-Pacheco
Affiliation:
fpacheco@unizar.es, Institute of Nanoscience of Aragon, Zaragoza, Spain
Jose M De Teresa
Affiliation:
deteresa@unizar.es, ICMA, CSIC-U.Zaragoza, Condensed Matter Physics Department, Facultad de Ciencias, Plaza San Francisco, Zaragoza, 50009, Spain, +34 976762463, +34 976761229
Rosa Cordoba
Affiliation:
rocorcas@unizar.es, Institute of Nanoscience of Aragon, Zaragoza, Spain
Ricardo Ibarra
Affiliation:
ibarra@unizar.es, Institute of Nanoscience of Aragon, Zaragoza, Spain
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Abstract

We report the magnetoresistance (MR) measurements in a nanoconstriction fabricated by focused-ion-beam (FIB) in the tunneling regime of conductance. The resistance of the contact was controlled during the fabrication process, being stable in the metallic regime, near the conductance quantum, and under high vacuum conditions. The metallic contact was deteriorated when exposed to atmosphere, resulting in a conduction mechanism by tunneling. The TMR was found to be of 3% at 24 K. The anisotropic tunneling magnetoresistance (TAMR) was around 2% for low temperatures, with a field angle dependence more abrupt than in bulk Fe. This preliminary result is promising for the application of this technique to fabricate stable ferromagnetic constrictions near the atomic regime of conductance, where high MR values are expected.

Keywords

ion-beam processingmagnetoresistance (magnetic)magnetic
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1181: Symposium DD – Ion Beams and Nano-Engineering , 2009 , 1181-DD02-03
Copyright
Copyright © Materials Research Society 2009

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References

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