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Ultra Thin Sacrificial Diffusion Barriers - Control of Diffusion Across the Cu-SiO2 Interface

Published online by Cambridge University Press:  21 February 2011

Eric Kirchner ,
S.P. Murarka ,
E. Eisenbraun  and
A. Kaloyeros
Eric Kirchner
Affiliation:
RPI, Troy, NY 12180
S.P. Murarka
Affiliation:
RPI, Troy, NY 12180
E. Eisenbraun
Affiliation:
SUNY, Albany, NY 12222
A. Kaloyeros
Affiliation:
SUNY, Albany, NY 12222
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Abstract

In a copper-SiO2 dielectric multilevel interconnection scheme a diffusion barrier is needed between the metal and the dielectric to prevent the diffusion of Cu into SiO2 when subjected to thermal treatments and high electric bias. Ultra thin layers (50–100Å) of Al and Ti are being investigated for use as the required diffusion barrier as well as an adhesion promoter between Cu and SiO2 The results of our investigations, using C-V, resistance, and XPS measurements, will be presented and discussed. It will be shown that both Al and Ti reduce the SiO2 surface leading to a metal, oxygen, and Si bonded layer which acts as diffusion barrier under applied electrical bias of 1.5 MV/cm at temperatures as high as 250–300°C. Upper layers of Al and Ti are consumed by reaction with Cu. Such reactions increase the electrical resistivity and corrosion resistance of Cu (especially with Al). The results and the applicability of such barriers in practical cases will be presented and discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 318: Symposium Ca – Interface Control of Electrical, Chemical, and Mechanical Properties , 1993 , 319
Copyright
Copyright © Materials Research Society 1994

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References

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