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Ultra-Thin Zirconium Silicate Filmsc With Good Physical And Electrical Properties For Gate Dielectric Applications

Published online by Cambridge University Press:  17 March 2011

Easwar Dharmarajan ,
Wen-Jie Qi ,
Renee Nieh ,
Laegu Kang ,
Katsunori Onishi  and
Jack C. Lee
Easwar Dharmarajan
Affiliation:
Microelectronics Research Center, The University of Texas at Austin, Austin, TX 78758
Wen-Jie Qi
Affiliation:
Microelectronics Research Center, The University of Texas at Austin, Austin, TX 78758
Renee Nieh
Affiliation:
Microelectronics Research Center, The University of Texas at Austin, Austin, TX 78758
Laegu Kang
Affiliation:
Microelectronics Research Center, The University of Texas at Austin, Austin, TX 78758
Katsunori Onishi
Affiliation:
Microelectronics Research Center, The University of Texas at Austin, Austin, TX 78758
Jack C. Lee
Affiliation:
Microelectronics Research Center, The University of Texas at Austin, Austin, TX 78758
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Abstract

The need for alternative gate dielectrics to replace conventional SiO2 is increasing to facilitate further CMOS scaling. One of the most promising materials for use as an alternative gate dielectric is Zr silicate due to its thermodynamic stability on Si and its good interface quality with Si. In this study, ultra-thin Zr silicate films (45 – 60 Å thick) with different Zr compositions have been deposited on Si using magnetron reactive co-sputtering. The Zr composition was kept below the stoichiometric value of about 16% to prevent precipitation of ZrO2and to have Si rich films for better interface quality. Films were rapid thermal annealed in N2 ambient up to 9000C and Pt was used as the gate electrode. Electrical characterization of these films was done using HP 4156 and HP 4194 parameter analyzers. Based on these studies, we demonstrate Zr silicate films with equivalent oxide thickness (EOT) of less than 14 Å with gate leakage significantly lower thanSiO2 of similar thickness and hysteresis of < 20mV ( in a sweep from –3 to 3 V). The films exhibit good thermal stability on Si even after 900 0C annealing as shown by a minimal increase in EOT with annealing. TEM and XPS analyses show high quality Zr silicate films that remain stable and amorphous even at 900 0C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 648: Symposium P – Growth, Evolution & Properties of Surfaces, Thin Films, and Self Organized Structure , 2000 , P6.16
Copyright
Copyright © Materials Research Society 2001

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