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The Use of Langmuir Probe Measurements to Study Reaction Kinetics in Remote Plasma-Enhanced Chemical Vapor Deposition of Silicon

Published online by Cambridge University Press:  21 February 2011

B. Anthony ,
T. Hsu ,
L. Breaux ,
R. Qian ,
S. Banerjee  and
A. Tasch
B. Anthony
Affiliation:
The University of Texas, Microelectronics Research Center, Department of Electrical and Computer Engineering, Austin, TX 78712.
T. Hsu
Affiliation:
The University of Texas, Microelectronics Research Center, Department of Electrical and Computer Engineering, Austin, TX 78712.
L. Breaux
Affiliation:
The University of Texas, Microelectronics Research Center, Department of Electrical and Computer Engineering, Austin, TX 78712.
R. Qian
Affiliation:
The University of Texas, Microelectronics Research Center, Department of Electrical and Computer Engineering, Austin, TX 78712.
S. Banerjee
Affiliation:
The University of Texas, Microelectronics Research Center, Department of Electrical and Computer Engineering, Austin, TX 78712.
A. Tasch
Affiliation:
The University of Texas, Microelectronics Research Center, Department of Electrical and Computer Engineering, Austin, TX 78712.
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Abstract

The reaction kinetics of Remote Plasma-enhanced Chemical Vapor Deposition (RPCVD) have been studied using Langmuir probe measurements of plasma density and plasma potential combined with growth rate data as a function of r-f power, chamber pressure, and substrate bias. An observed increase in growth rate for negative substrate bias suggests that argon ions drive the reaction. The variation of ion density, and plasma potential with r-f power suggests that the flux of argon ions, not their kinetic energy is responsible for increased growth rates at higher r-f powers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 190: Symposium M – Plasma Processing and Synthesis of Materials III , 1990 , 267
Copyright
Copyright © Materials Research Society 1991

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References

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