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Violet Luminescence from Ge+-Implanted SiO2 Film on Si Substrate

Published online by Cambridge University Press:  03 September 2012

Xi-Mao Bao ,
Ting Gao ,
Feng Yan  and
Song Tong
Xi-Mao Bao
Affiliation:
Department of Physics and Laboratory of Solid State Microstructures, Nanjing University, Nanjing, 210093, People's Republic of China, xmbao@nju.edu.cn
Ting Gao
Affiliation:
Department of Physics and Laboratory of Solid State Microstructures, Nanjing University, Nanjing, 210093, People's Republic of China, xmbao@nju.edu.cn
Feng Yan
Affiliation:
Department of Physics and Laboratory of Solid State Microstructures, Nanjing University, Nanjing, 210093, People's Republic of China, xmbao@nju.edu.cn
Song Tong
Affiliation:
Department of Physics and Laboratory of Solid State Microstructures, Nanjing University, Nanjing, 210093, People's Republic of China, xmbao@nju.edu.cn
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Abstract

The SiO2 films thermally grown on crystalline Si were implanted with Ge ions at 60 keV with doses of l×1015 cm-2 and l×1016 cm-2, followed by thermal annealing at various temperatures. Under an ultraviolet excitation of 240 nm, the films exhibit intense violet luminescence with a peak at 396 nm. This peak is ascribed to the T1 → S0 transition in GeO formed during implantation and annealing. After 1100°C annealing, Ge clusters were formed in an SiO2 matrix and a PL peak at 840 nm, due to the quantum confinement effect, which was measured at low temperature (77 K).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 438: Symposium A – Materials Modificaton and Synthesis by Ion Beam… , 1996 , 477
Copyright
Copyright © Materials Research Society 1997

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