Hostname: page-component-745bb68f8f-d8cs5 Total loading time: 0 Render date: 2025-02-05T21:32:10.168Z Has data issue: false hasContentIssue false
  • English
  • Français

Well Thickness And Doping Effects, And Room Temperature emission mechanisms in InGaN/GaN And GaN/AlGaN Multiple Quantum Wells

Published online by Cambridge University Press:  10 February 2011

K. C. Zeng ,
M. Smith ,
J. Y. Lin ,
H. X. Jiang ,
H. Tang ,
A. Salvador ,
W. Kim ,
H. Morkoc  and
M. Asif Khan
K. C. Zeng
Affiliation:
Department of Physics, Kansas State University, Manhattan, KS, 66506–2601
M. Smith
Affiliation:
Department of Physics, Kansas State University, Manhattan, KS, 66506–2601
J. Y. Lin
Affiliation:
Department of Physics, Kansas State University, Manhattan, KS, 66506–2601
H. X. Jiang
Affiliation:
Department of Physics, Kansas State University, Manhattan, KS, 66506–2601
H. Tang
Affiliation:
Materials Laboratory and Coordinated Science Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
A. Salvador
Affiliation:
Materials Laboratory and Coordinated Science Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
W. Kim
Affiliation:
Materials Laboratory and Coordinated Science Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
H. Morkoc
Affiliation:
Materials Laboratory and Coordinated Science Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
M. Asif Khan
Affiliation:
Department of Electrical and Computing Engineering, University of South Carolina, Columbia, SC 29208.
Get access

Abstract

Effects of well thickness and Si-doping on the photoluminescence (PL) emission properties of GaN/AlxGa1-xN (x ∼ 0.07) and InxGa1-xN/GaN (x ∼ 0.15–0.2) multiple quantum wells (MQWs) grown both by MOCVD and reactive MBE have been studied. The room temperature emission mechanisms have also been addressed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 482 , 1997 , 643
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Mohammad, S. N. and Morkoc, H., Progress of Quantum Electronics, 208,361 (1996).10.1016/S0079-6727(96)00002-XGoogle Scholar
[2] Nakamura, S., Senoh, M., Iwasa, N., and Nagahama, S., Jpn. J. Appl. Phys. 34, L797 (1995).10.1143/JJAP.34.L797Google Scholar
[3] Nakamura, S., Senoh, M., Iwasa, N., Nagahama, S., Yamada, T., Matsushita, T., Kiyoku, H., and Sugimoto, Y., Appl. Phys. Lett. 68, 2105 (1996).10.1063/1.115599Google Scholar
[4] Khan, M. Asif, Shur, M. S., Kuznia, J. N., Chen, Q., Burn, J, and Schaff, W., Appl. Phys. Lett. 66, 1083 (1995).10.1063/1.113579Google Scholar
[5] Mohammad, S. N., Fan, Z.-F., Salvador, A., Aktas, O., Botchkarev, A. E., Kim, W., and Morkoc, H., Appl. Phys. Lett. 69, 1420 (1996).10.1063/1.117601Google Scholar
[6] Chen, G. D., Smith, M., Lin, J..Y, Jiang, H. X., Wei, S. H., Khan, M. Asif, and Sun, C. J., Appl. Phys. Lett. 68, 2784 (1996).10.1063/1.116606Google Scholar
[7] Smith, M., Chen, G. D., Li, J. Z., Lin, J. Y., Jiang, H. X., Salvador, A., Kim, W., Aktas, O., Botchkarev, A., and Morkoc, H., Appl. Phys. Lett. 67, 3387 (1995).10.1063/1.114902Google Scholar
[8] Smith, M., Chen, G. D., Lin, J..Y, Jiang, H. X., Khan, M. Asif, Sun, C. J., Chen, Q., and Yang, J. W., J. Appl. Phys. 79, 7001 (1996).10.1063/1.362448Google Scholar
[9] Reynolds, D. C., Look, D. C., Kim, W., Ozgur, A., Botchkarev, A., Salvador, A., Morkoc, H., and Talwar, D. N., J. Appl. Phys. 80, 594 (1996).10.1063/1.362724Google Scholar
[10] Shan, W., Little, B. D., Fischer, A. J., Song, J. J., Goldenberg, B., Perry, W. G., Bremser, M. D., and Davis, R. F., Phys. Rev. B 54, 16369 (1996).10.1103/PhysRevB.54.16369Google Scholar
[11] Smith, M., Lin, J. Y., Jiang, H. X., Salvador, A., Botchkarev, A., Kim, W., and Morkoc, H., Appl. Phys. Lett. 69, 2453 (1996).10.1063/1.117495Google Scholar
[12] Klein, M. V., IEEE J. Quantum Electron. QE–22, 1760 (1986).10.1109/JQE.1986.1073174Google Scholar
[13] Zeng, K. C., Lin, J. Y., Jiang, H. X., Salvador, A., Popovici, G., Tang, H., Kim, W., and Morkoc, H., Appl. Phys. Lett. 71, 1368 (1997).10.1063/1.119896Google Scholar
[14] Smith, M., Lin, J. Y., and Jiang, H. X., Appl. Phys. Lett. 71,635 (1997).10.1063/1.119813Google Scholar
[15] Abram, R. A., Rees, G. J., and Wilson, B. L. H., Adv. Phys. 27, 799 (1978).10.1080/00018737800101484Google Scholar
[16] Kim, C., Robinson, I. K., Myoung, J., Shim, K., Yoo, M. C., and Kim, K., Appl. Phys. Lett. 69, 2358 (1996).10.1063/1.117524Google Scholar
[17] Keller, S., Kelller, B. P., Kapolnek, D., Abare, A. C., Masui, H., Coldren, L. A., Mishra, U. K., and Baars, S. P. Den, Appl. Phys. Lett. 68, 3147 (1996)10.1063/1.115806Google Scholar
[18] Chichibu, S., Azuhata, T., Sota, T., and Nakamura, S., Appl. Phys. Lett. 69, 4188 (1996).10.1063/1.116981Google Scholar
[19] Ruvimov, S., Liliental-Weber, Z., Suski, T., Ager, J. W. III, Washburn, J., Kreger, J., Kisielowski, C., Weber, E. R., Amano, H., and Akasaki, I., Appl. Phys. Lett. 69,990 (1996).10.1063/1.117105Google Scholar