Hostname: page-component-6bf8c574d5-rwnhh Total loading time: 0 Render date: 2025-02-22T16:52:02.470Z Has data issue: false hasContentIssue false
  • English
  • Français

Wet Oxidation of High-Al-Content III–V Semiconductors: Important Materials Considerations for Device Applications

Published online by Cambridge University Press:  10 February 2011

Carol I. H. Ashby
Carol I. H. Ashby*
Affiliation:
Sandia National Laboratories, Albuquerque, New Mexico 87185–0603
Get access

Abstract

Wet oxidation of high-Al-content AIGaAs semiconductor layers in vertical cavity surface emitting lasers (VCSELs) has produced devices with record low threshold currents and voltages and with wall-plug efficiencies greater than 50%. Wet oxidation of buried AlGaAs layers has been employed to reduce the problems associated with substrate current leakage in GaAs-on-insulator (GOL) MESFETs. Wet oxidation has also been considered as a route to the long-sought goal of a III-V MIS technology. To continue improving device designs for even higher performance and to establish a truly manufacturable technology based on wet oxidation, the effect of oxidation of a given layer on the properties of the entire device structure must be understood. The oxidation of a given layer can strongly affect the electrical and chemical properties of adjacent layers. Many of these effects are derived from the production of large amounts of elemental As during the oxidation reaction, the resultant generation of point defects, and the diffusion of these defects into adjacent regions. This can modify the chemical and electrical properties of these regions in ways that can impact device design, fabrication, and performance. Current understanding of the problem is discussed here

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 573: Symposium Z – Compound Semiconductor Surface Passivation and Novel Device.. , 1999 , 203
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Dallesasse, J. M., Holonyak, N., Jr., Sugg, A. R., Richard, T. A., and EI-Zein, N., Appl. Phys. Lett. 57,2844 (1990).Google Scholar
2. Choquette, K. D., Schneider, R.P., Jr., Lear, K. L., and Geib, K. M., Electroni. Lett. 30, 2043 (1994).Google Scholar
3. Lear, K.L., Choquette, J.D., Schneider, R.P., Jr., Kilcoyne, S.P., and Geib, K. M., Electron. Lett. 31, 208 (1995).Google Scholar
4. Parikh, P.A., Chavarkar, P. M., and Mishra, U.K., IEEE Electron. Device Lett. 18, 111 (1997).Google Scholar
5. Chen, E.I., Holonyak, N., Jr., and Maranowski, S.A, Appl. Phys. Lett. 66, 2688, (1995).Google Scholar
6. Choquette, K. D., Geib, K. M., Ashby, C. I. H., Twesten, R. D., Blum, O., Hou, H. Q., Follstaedt, D. M., Hammons, B. E., Mathes, D., and Hull, R., IEEE J. Select. Topics in Quant. Electron. 3, 916 (1997).Google Scholar
7. Ashby, C. I. H., Sullivan, J. P., Newcomer, P.P., Missert, N. A., Hou, H. Q.. Hammons, B. E., Hafich, M. J., and Baca, A. G., Appl. Phys. Lett. 70, 2443 (1997).Google Scholar
8. Schwartz, G.P., Schwartz, B., DiStefano, D., Gualtieri, G.J., and Griffiths, J.E., Appl. Phys. Lett. 34,205 (1979).Google Scholar
9. Schwartz, G.P., Gualtieri, G.J., Griffiths, J.E., Thurmond, C.D., Schwartz, B., J. Electrochem. Soc. 127, 2488 (1980).Google Scholar
10. Ashby, C. I. H., Sullivan, J. P., Choquette, K. D., Geib, K.M., and Hou, H. Q., J. Appl. Phys. 82, 3134 (1997).Google Scholar
11. Mitchell, W. J., Chung, C.-H., Yi, S.I., Hu, E.L., and Weinberg, W.H., J. Vac. Sci. Technol. B15, 1182 (1997).Google Scholar
12. Thermochemical data used in calculations found in Kubaschewski, O., Alcock, C. B., Spencer, P. J., “Materials Thermochemistry”, Pergamon Press, UK, 1993.Google Scholar
13. Kish, F.A., Caracci, S.J., Holonyak, N., Jr., Hsieh, K.C., Baker, J.E., Maranowski, S. A., Sugg, A.R., Dallesasse, J.M., Fletcher, R.M., Kuo, C.P., Osentowski, T.D., and Craford, M.G., J. Electron. Mater. 21, 1133 (1992).Google Scholar
14. Liliental-Weber, Z., Richter, O., Swider, W., Li, M., Li, G.S., Chang-Hasnain, C., and Weber, E.R., in “Semiconducting and Insulating Materials”, edts. Z. Liliental-Weber and C. Miner, IEEE, 1999 in press.Google Scholar
15. Ashby, C.I.H., Bridges, M.M., Allerman, A.A., Hammons, B.E., and Hou, H.Q., to be published in App. Phys. Lett.Google Scholar
16. Deal, B. E. and Grove, A. S., J. Appl. Phys. 36, 3770 (1965).Google Scholar
17. Langenfelder, T., Schröder, St., and Grothe, H., J. Appl.Phys. 82, 3548 (1997).Google Scholar
18. Ochiai, M., Giudice, G. E., Temkin, H., Scott, J. W., and Cockerill, T. M., Appl. Phys. Lett. 68, 1898 (1996).Google Scholar
19. Feld, S. A., Loehr, J. P., Sherriff, R. E., Miemeri, J., and Kaspi, R., IEEE Photon. Technol. Lett. 10 197 (1998).Google Scholar
20. Twesten, R. D., Follstaedt, D. M., and Choquette, K. D., “Vercital-Cavity Surface Emitting Lasers, Choquette, K. D. and Deppe, D. G., eds., Proc. SPIE-The International Society for Optical Engineering Proceedings 3003, 55 (1997).Google Scholar
21. Tan, T. Y., Mater. Sci. and Engin. B10 227 (1991).Google Scholar
22. Blum, O., Ashby, C. I. H., and Hou, H. Q., Appl. Phys. Lett. 70, 2870 (1997).Google Scholar
23. Wee, S.F., Chai, M.K., Homewood, K.P., and Gillin, W.P., J. Appl. Phys. Lett. 82,4842 (1997).Google Scholar
24. Blum, O., Lear, K. L., Hou, H. Q., and Warren, M. E., Electron. Lett. 32, 1406 (1996).Google Scholar
25. Naone, R. L., Hegbloom, E. R., Thibeault, B. J., and Coldren, L. A., Electron. Lett. 33, 300 (1997).Google Scholar
26. Liliental-Weber, Z., Ruvimov, S., Swider, W., Washburn, J., Li, M., Li, G.S., and Chang-Hasnain, C., and Weber, E.R. et al., SPIE–The International Society for Optical Engineering Proceedings 3006, 15 (1997).Google Scholar
27. Parikh, P.A., Chavarkar, P.M., Zhao, L., Ibbetson, J., Speck, J.S., Mishra, U.K., “Effect of oxidation of AlxGal -xAs on Adjacent Semiconductor Layers: Hall (Electrical) and TEM (Structural Characterization)”, 1997 EMC Proceedings, pp 40.Google Scholar
28. Shi, S. S., Ph. D. thesis, ‘Hydrogen Passivation of Native Oxides in GaAs-based III-V Devices’, September 1997.Google Scholar
29. Shi, S. S., Hu, E. L., Zhang, J.-P., Chang, Y.-I., Parikh, P., and Mishra, U. K., Appl. Phys. Lett. 70 1293 (1997).Google Scholar
30. Lin, C.-K., Zhang, X., Dapkus, P. D., and Rich, D. H., Appl. Phys. Lett. 71 3108 (1997).Google Scholar