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XPS Measurement of the SiC/AlN Band-Offset at the (0001) Interface

Published online by Cambridge University Press:  21 February 2011

Sean W. King ,
Mark C. Benjamin ,
Robert J. Nemanich ,
Robert F. Davis  and
Walter R. L. Lambrecht
Sean W. King
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleygh, NC 27695
Mark C. Benjamin
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695
Robert J. Nemanich
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695
Robert F. Davis
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleygh, NC 27695
Walter R. L. Lambrecht
Affiliation:
Department of Physics, Case Western Reserve University, Cleveland, OH 44106
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Abstract

X-ray photoelectron spectroscopy is used to determine the band-offset at the SiC/AIN (0001) interface. First, the valence band spectra are determined for bulk materials and analyzed with the help of calculated densities of states. Core levels are then measured across the interface for a thin film of 2H-AIN on 6H-SiC and allow us to extract a band offset of 1.4 ±0.3 eV. The analysis of the discrepancies between measured peak positions and densities of states obtained within the local density approximation provides information on self-energy corrections in good agreement with independent calculations of the latter.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 395: Symposium AAA – Gallium Nitride and Related Materials: The First International Symp , 1995 , 375
Copyright
Copyright © Materials Research Society 1996

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References

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