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XPS Surface Composition Analysis During UV Laser Photodeposition of Al From Tiba on Si (100) Substrates: Direct Observation of the Prenucleation Regime

Published online by Cambridge University Press:  26 February 2011

David A. Mantell  and
T.E. Orlowski
David A. Mantell
Affiliation:
Xerox Webster Research Center, Webster, NY 14580
T.E. Orlowski
Affiliation:
Xerox Webster Research Center, Webster, NY 14580
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Abstract

An in situ XPS study is made of the AI film growth from TIBA using an ArF pulsed laser on Si (100) substrates. It is found that the film is formed by the photochemical decomposition of the organometaliic on the surface. A metallic film is formed by island growth. These islands are covered with an organometaliic fragment layer of partially decomposed TIBA. The consequences of these observations toward understanding how laser processing can create prenucleation regions that catalyze film growth at temperatures below standard CVD temperatures are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 101: Symposium B – Laser and Particle-Beam Chemical Processing for Microelectronics , 1987 , 171
Copyright
Copyright © Materials Research Society 1998

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References

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