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X-Ray Diffraction From Buried GaAs/GaSb Interfaces

Published online by Cambridge University Press:  21 February 2011

Alain Bourret ,
P. H. Fuoss ,
A. Rocher  and
C. Raisin
Alain Bourret
Affiliation:
AT&T Bell Lab. Holmdel NJ. Present address : CEN Grenoble, DRF/Service de Physique, 38041 Grenoble F
P. H. Fuoss
Affiliation:
T&T Bell Labs. Murray Hill, NJ
A. Rocher
Affiliation:
CEMES/LOE -31400 Toulouse, France
C. Raisin
Affiliation:
LESIC -34060 Montpellier, France
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Abstract

The initial stage of epitactic growth of GaSb film on GaAs has been studied by X-ray diffraction. On each island the 8% misfit is accommodated by a periodic network composed of two perpendicular sets of Lomer dislocations. This network is already formed at 10Å nominal thickness. The relaxation of the e ilayer towards its bulk lattice parameter is almost complete so that a supercell is observed. The behaviour of the dislocation satellites is accurately explained by the presence of a periodic displacement field at and close to the interface. A quantitative fit with a simple elastic model is, however, insufficient to fit the data, implying that interdiffusion occurs close to the interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 208: Symposium J – Advances in Surface and Thin Film Diffraction , 1990 , 303
Copyright
Copyright © Materials Research Society 1991

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References

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