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X-Ray Measurements of Deformations in Films and Substrates in Heteroepitaxial SYSTEM GaAs/Ge

Published online by Cambridge University Press:  21 February 2011

N. Burle ,
B. Pichaud  and
O. Thomas
N. Burle
Affiliation:
Lab. MATOP-CNRS, case 151, Fac. Sciences St-Jérúme, 13397 Marseille Cedex 20, France
B. Pichaud
Affiliation:
Lab. MATOP-CNRS, case 151, Fac. Sciences St-Jérúme, 13397 Marseille Cedex 20, France
O. Thomas
Affiliation:
Lab. MATOP-CNRS, case 151, Fac. Sciences St-Jérúme, 13397 Marseille Cedex 20, France
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Abstract

X-Ray Transmission and Reflection Topography settings have been used to perform stress and strain measurements in the epitaxial system GaAs/Ge : radius of curvature of the whole sample is obtained from the Lang (transmission) set-up ; tetragonal distortion in the layer is deduced from the Berg-Barrett (reflection) setup. Comparison of these results and correlation with dislocations densities estimated from topographs enable the elastic state of the system to be known.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 356: Symposium B2 – Thin Films: Stresses and Mechanical Properties V , 1994 , 313
Copyright
Copyright © Materials Research Society 1995

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References

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