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X-ray Spectroscopic Studies of the Bulk Electronic Structure of InGaN Alloys

Published online by Cambridge University Press:  11 February 2011

Cormac McGuinness ,
James E. Downes ,
Philip Ryan ,
Kevin E. Smith ,
Dharanipal Doppalapudi  and
Theodore D. Moustakas
Cormac McGuinness
Affiliation:
Department of Physics, Boston University, Boston, MA 02215
James E. Downes
Affiliation:
Department of Physics, Boston University, Boston, MA 02215
Philip Ryan
Affiliation:
Department of Physics, Boston University, Boston, MA 02215
Kevin E. Smith*
Affiliation:
Department of Physics, Boston University, Boston, MA 02215
Dharanipal Doppalapudi
Affiliation:
Electrical and Computer Engineering Department, Boston University, Boston, MA 02215
Theodore D. Moustakas
Affiliation:
Electrical and Computer Engineering Department, Boston University, Boston, MA 02215
*
** Author to whom correspondence should be addressed. Electronic mail: ksmith@bu.edu.
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Abstract

Synchrotron radiation excited soft x-ray emission and soft x-ray absorption spectroscopies are applied to the study of the electronic structure of InxGa1-xN alloys with (0 ≤ x ≤ 0.29). The elementally resolved partial density of states of the valence and conduction bands may be measured using these spectroscopies. The x-ray absorption spectra indicate that the conduction band broadens considerably with increasing indium incorporation. The band gap evolution as a function of indium content derives primarily from this broadening of the conduction band states. The emission spectra indicate that motion of the valence band makes a smaller contribution to the evolution of the band gap. This gap evolution differs from previous studies on the AlxGa1-xN alloy system, which observed a linear valence band shift through the series (0 < x < 1). Instead in the case of InxGa1-xN the valence band exhibits a significant shift between x = 0 and x = 0.1 with minimal movement thereafter. Furthermore, evidence of In 4d -N 2p and Ga 3d- N 2p hybridisation is reported. Finally, the thermal stability of an In011Ga089N film was investigated. Both emission and absorption spectra were found to have a temperature dependent shift in energy, but the overall definition of the spectra was unaltered even at annealing temperatures well beyond the growth temperature of the film.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 743: Symposium L – GaN and Related Alloys , 2002 , L10.11
Copyright
Copyright © Materials Research Society 2003

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Footnotes

*

Advanced Photon Source, Argonne National Laboratory, Argonne, IL 60439, USA

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