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X-Ray Strain Measurements in Fine-Line Patterned AL-CU Films

Published online by Cambridge University Press:  22 February 2011

M. A. Marcus ,
W.F. Flood ,
R. A. Cirelli ,
R. C. Kistler ,
N. A. Ciampa ,
W. M. Mansfield ,
D. L. Barr ,
C.A. Volkert  and
K. G. Steiner
M. A. Marcus
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill NJ 07974
W.F. Flood
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill NJ 07974
R. A. Cirelli
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill NJ 07974
R. C. Kistler
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill NJ 07974
N. A. Ciampa
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill NJ 07974
W. M. Mansfield
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill NJ 07974
D. L. Barr
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill NJ 07974
C.A. Volkert
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill NJ 07974
K. G. Steiner
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill NJ 07974
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Abstract

In order to better understand the mechanics of metallization structures having very fine features, we performed in-situ, temperature-dependent X-ray strain measurements on Al-Cu films patterned into gratings with linewidths of 0.2-0.8μm, with and without a dielectric covering In comparison with earlier work on coarser structures, we find larger strains and less hysteresis, indicating an increased yield stress. The stress in unpassivated lines is almost independent of the linewidth. The slope of the stress/temperature curves for passivated lines increases with decreasing linewidth, so that the compressive stress at 500°C reaches 900MPa for the narrowest lines. The tensile stress at RT is smaller for the narrower lines, suggesting that these lines may not stress-void as much as wider ones. The significance of these results for stress voiding and electromigration will be discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 338: Symposium – Materials Reliability in Microelectronics IV , 1994 , 203
Copyright
Copyright © Materials Research Society 1994

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References

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