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AC Photovoltaic Inspection of P-N Junctions having High Leakage Current

Published online by Cambridge University Press:  25 February 2011

N. Honma ,
H. Shimizu ,
C. Munakata  and
M. Ogasawara
N. Honma
Affiliation:
Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo 185, Japan
H. Shimizu
Affiliation:
Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo 185, Japan
C. Munakata
Affiliation:
Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo 185, Japan
M. Ogasawara
Affiliation:
Device Development Center, Hitachi Ltd., Oume, Tokyo 198, Japan
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Abstract

A focused photon beam chopped at 2 kHz scans p-n junctions in a p-type Si wafer and ac photovoltages are capacitively measured in order to inspect homogeneities of the junctions. It is found that the ac photovoltages are high not only in the junction areas but also in the field oxide regions around the junctions when the junctions are leaky. This indicates that dense positively charged traps exist at the interface between the heavily boron implanted Si substrate and the field oxide layer around the high leakage junction, and that the traps cause the increase in both the junction leakage current and the ac photovoltage.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 951
Copyright
Copyright © Materials Research Society 1990

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References

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