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Acceptor Concentration Control of p-ZnSe using N2+He Gas Plasma by Molecular Beam Epitaxy

Published online by Cambridge University Press:  22 February 2011

Masakazu Kobayashi  and
Akihiko Yoshikawa
Masakazu Kobayashi
Affiliation:
Department of Electrical and Electronics Engineering, Chiba University, 1–33 Yayoi-cho, Inage-ku, Chiba 263, Japan
Akihiko Yoshikawa
Affiliation:
Department of Electrical and Electronics Engineering, Chiba University, 1–33 Yayoi-cho, Inage-ku, Chiba 263, Japan
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Abstract

Nitrogen and helium mixed gas plasma was used to grow p-ZnSe. Using the mixed gas, the acceptor concentration could be controlled from 6x1016 to 7x1017 cm−3 while films doped using the nitrogen plasma exhibited the acceptor concentration of 3x1017 cm−3. Doping characteristics such as the acceptor concentration and the PL properties depend on the gas mixing ratio and the rf power. Plasma spectroscopy was used to characterize the variety of the species in the plasma. Although the variety of the nitrogen related peaks in the spectrum were not significantly affected by the gas mixing, several peaks (for example 745nm and 825nm) showed intensity variation that was similar to the acceptor concentration variation with respect to the N2 and He gas mixing ratio.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 340: Symposium E – Compound Semiconductor Epitaxy , 1994 , 437
Copyright
Copyright © Materials Research Society 1994

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References

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