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Accurate Modeling of Residual recoil-mixing during SIMS Measurements

Published online by Cambridge University Press:  21 March 2011

Ming Hong Yang  and
Robert Odom
Ming Hong Yang
Affiliation:
Charles Evans and Associates, Sunnyvale, CA 94086, USA
Robert Odom
Affiliation:
Charles Evans and Associates, Sunnyvale, CA 94086, USA
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Abstract

Secondary ion mass spectrometry (SIMS) is an effective and powerful analytical technique, widely used in accurately determining dopant distributions (depth profiles). However, primary ion beam induced mass transport (ion mixing), especially the residual effect during SIMS profile measurements, greatly limits theaccuracy at nanometer depth resolutions by displacing and broadening the measured depth profile. In this paper, we present a simple deconvolution algorithm based on the general characteristics of the experimentally observed SIMS response function to reduce this broadening effect, thereby providing more accurate depth profiles. The results for several specific applications of this approach are presented and its strengths and limitations are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 669: Symposium J – Si Front-End Processing–Physics and Technology of Dopant-Defect Interactions III , 2001 , J4.16
Copyright
Copyright © Materials Research Society 2001

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References

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