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Achievement Of Coalesced Oriented Diamond Films On Nickel By Optical Process Control And Methane Enrichment

Published online by Cambridge University Press:  10 February 2011

P. C. Yang ,
C. A. Wolden ,
W. Liu ,
R. Schlesser ,
R. F. Davis ,
J. T. Prater  and
Z. Sitar
P. C. Yang
Affiliation:
Physics Department, North Carolina State University, Raleigh, NC 2769
C. A. Wolden
Affiliation:
Department of Chemical Engineering, Colorado School of Mines, Golden, Co 80401
W. Liu
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695
R. Schlesser
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695
R. F. Davis
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695
J. T. Prater
Affiliation:
Army Research Office, RTP, NC27709.
Z. Sitar
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695
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Abstract

Real time in-situ laser reflectometry was used to investigate changes in surface morphology observed during the nucleation of oriented diamond on Ni in a hot filament chemical vapor deposition reactor. Characteristic features observed in the intensities of reflected and scattered light were interpreted by comparison with scanning electron micrographs of the diamond seeded substrates quenched at sequential stages of the process. Based on this analysis, a process was developed in which the scattered light signal was used as a steering parameter. Using this process, oriented nucleation and growth of diamond on Ni can be repeatedly achieved. For the purpose of both countering the loss of carbon atoms and to maximize the density of oriented diamond, different concentrations of methane were added during the high temperature annealing stage to find the optimized conditions. It was found that 0.5% methane in the gas phase produced the best degree of orientation and uniformity. Substrates nucleated at these conditions were grown out into coalesced, 30 μm thick films. Both, (100) and (111) oriented films showed a high degree of orientation. Raman spectra obtained from each orientation showed an intense and narrow diamond signature peak with negligible sp2 carbon or background luminescence.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 483: Symposium E – Power Semiconductor Materials & Devices , 1997 , 213
Copyright
Copyright © Materials Research Society 1998

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