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Activation of the Si(100)/Cl2 Etching Reaction at High Cl2 Translational Energies

Published online by Cambridge University Press:  25 February 2011

Francis X. Campos ,
Gabriela C. Weaver ,
Curtis J. Waltman  and
Stephen R. Leone
Francis X. Campos
Affiliation:
Joint Institute for Laboratory Astrophysics, University of Colorado and National Institute of Standards and Technology, and Department of Chemistry, University of Colorado, Boulder, Colorado,80309-0440
Gabriela C. Weaver
Affiliation:
Joint Institute for Laboratory Astrophysics, University of Colorado and National Institute of Standards and Technology, and Department of Chemistry, University of Colorado, Boulder, Colorado,80309-0440
Curtis J. Waltman
Affiliation:
Joint Institute for Laboratory Astrophysics, University of Colorado and National Institute of Standards and Technology, and Department of Chemistry, University of Colorado, Boulder, Colorado,80309-0440
Stephen R. Leone
Affiliation:
Staff member, Quantum Physics Division, National Institute of Standards and Technology.
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Abstract

Exposing a Si(100) surface to a pulsed beam of neutral Cl2 with high translational energy results in etching at a rate faster than that seen with chlorine at thermal energies. The Cl2 beam used in these experiments is produced by laser vaporization of cryogenic films. It has a broad energy distribution which can be varied by changing laser energy and film thickness. Beams with mean energies as low as 0.4 eV result in etching =10 times faster than etching by thermal Cl2. When Cl2 beams are used which have considerable flux above 3 eV, the etching rate increases by a further factor of 3.6 ± 0.6. This rate increase, which occurs at energies just above the Si-Si bond energy, suggests that kinetic energy can be efficiently utilized to break surface bonds.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 236: Symposium B – Photons and Low Energy Particles in Surface Processing , 1991 , 177
Copyright
Copyright © Materials Research Society 1992

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