Hostname: page-component-745bb68f8f-grxwn Total loading time: 0 Render date: 2025-01-28T10:07:35.811Z Has data issue: false hasContentIssue false
  • English
  • Français

Addressing the Problems of Agglomeration, Surface Roughness and Crystal Imperfection in Soi Films

Published online by Cambridge University Press:  28 February 2011

S. Ramesh ,
A. Martinez ,
J. Petruzzello ,
H. Baumgart  and
Emil Arnold
S. Ramesh
Affiliation:
Philips Laboratories, North American Philips Corporation, Briarcliff Manor, New York 10510
A. Martinez
Affiliation:
Philips Laboratories, North American Philips Corporation, Briarcliff Manor, New York 10510
J. Petruzzello
Affiliation:
Philips Laboratories, North American Philips Corporation, Briarcliff Manor, New York 10510
H. Baumgart
Affiliation:
Philips Laboratories, North American Philips Corporation, Briarcliff Manor, New York 10510
Emil Arnold
Affiliation:
Philips Laboratories, North American Philips Corporation, Briarcliff Manor, New York 10510
Get access

Abstract

We have designed and experimentally tested, under a wide variety of laser recrystallization conditions, a reliable encapsulation structure that prevents agglomeration and enables recrystallization of SOT films over a 100% wafer area. Our experiments indicate that the wetting characteristics of the structure can also improve the surface planarity of the recrystallized silicon. We also report a dramatic reduction in defect density and the non - occurrence of the characteristic branched subgrain boundary pattern under appropriate conditions of laser recrystallization.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 53 , 1985 , 45
Copyright
Copyright © Materials Research Society 1986

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Pfeiffer, L., Paine, S., Gilmer, G.H., Saarloos, W.V., and West, K.W., Phys. Rev. Lett., Vol. 54, p. 1944 (1985).Google Scholar
[2] Arnold, E., Landman, U., Ramesh, S., Leudtke, W.D., Barnett, R.N., Proc. of MRS Fall Meeting (1985); Phys. Rev. Lett., Vol. 56, p. 155 (1986).Google Scholar
[3] Ramesh, S., Arnold, E. and Martinez, A., to be published.Google Scholar
[4] Celler, G.K., CRC Critical Reviews in Solid Stater and Materials Sciences, Vol.12 Issue 3 (1985), and references therein.Google Scholar
[5] Lee, K.F., Stultz, T.J., Gibbons, J.F., Semiconductors and Semimetals, Vol. 17, edited by Gibbons, J.F. (Academic Press, 1984) and references therein.Google Scholar
[6] Maby, E.W., Geis, M.W., LeCoz, Y.L., Silversmith, D.J., Mountain, R.W. and Antoniadis, D.A., IEEE Electron. Dev. Lett., Vol. EDL–2, p. 241 (1981).Google Scholar
[7] Ohkura, M., Kusokawa, K., Yoshida, I., Miyuo, M., and Tokuyama, T., 15th Conf. on Solid State Devices and Materials, Tokyo (1983).Google Scholar
[8] Geis, M.W., Smith, H.I., Silversmith, D.J., Mountain, R.W., Thompson, C.W., J. Electrochem. Soc., Vol. 130, p. 1178 (1983).Google Scholar
[9] Ramesh, S., Martinez, A., Petruzzello, J. and Arnold, E., to be published.Google Scholar