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Adhesion Energy Measurements of Multilayer Low-K Dielectric Materials for ULSI Applications

Published online by Cambridge University Press:  10 February 2011

E. O. Shaffer II ,
M. E. Mills ,
D. Hawn ,
M. Van Gestel ,
A. Knorr ,
H. Gundlach ,
K. Kumar ,
A. E. Kaloyeros  and
R. E. Geer
E. O. Shaffer II
Affiliation:
The Dow Chemical Company, Advanced Electronic Materials, Midland, MI 48674
M. E. Mills
Affiliation:
The Dow Chemical Company, Advanced Electronic Materials, Midland, MI 48674
D. Hawn
Affiliation:
The Dow Chemical Company, Advanced Electronic Materials, Midland, MI 48674
M. Van Gestel
Affiliation:
Center for Adv. Thin Film Technologies, State University of New York, Albany NY, 12222.
A. Knorr
Affiliation:
Center for Adv. Thin Film Technologies, State University of New York, Albany NY, 12222.
H. Gundlach
Affiliation:
Center for Adv. Thin Film Technologies, State University of New York, Albany NY, 12222.
K. Kumar
Affiliation:
Center for Adv. Thin Film Technologies, State University of New York, Albany NY, 12222.
A. E. Kaloyeros
Affiliation:
Center for Adv. Thin Film Technologies, State University of New York, Albany NY, 12222.
R. E. Geer
Affiliation:
Center for Adv. Thin Film Technologies, State University of New York, Albany NY, 12222.
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Abstract

Currently, the IC industry is researching the integration of a variety of materials to meet the low dielectric constant requirement for improved back-end of line (BEOL) interconnect performance. One critical dimension for successful ntegration of these new materials is maintaining mechanical integrity through multilayer processes. This includes both cohesive and adhesive fracture resistance. The latter adds additional complexity in that adhesive toughness is a function of the adherend materials and the processes used to join them. Hence, many good dielectric materials may be rematurely eliminated from further research not because of inherently poor adhesion but because of the necessity to optimize processing strategies.

In this paper, we use the modified Edge Liftoff Test (m-ELT) to quantify the mechanical adhesion of multilayer blanket coatings. A specific example is used to demonstrate the utility of combining the m-ELT with surface analysis to optimize the reliability of low-K dielectric resins for use in ULSI applications. The system studied consists of a Cyclotene™ 5021(BCB) low-K material integrated with CVD aluminum for single level, damascene structures. The effects of liner layer metallurgy and surface plasma treatments are measured. Surface analysis is done on the failed parts to understand the location of the failure. In this way recommendations for process optimization can be made.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 511: Symposium E – Low Dielectric Constant Materials IV , 1998 , 133
Copyright
Copyright © Materials Research Society 1998

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References

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